Semiconductor memory cell and method of manufacturing the same

ABSTRACT

A semiconductor memory cell comprising (1) a first transistor of a first conductivity type for read-out having source/drain regions composed of a surface region of a third region and a second region and a channel forming region composed of a surface region of a first region, (2) a second transistor of a second conductivity type for write-in having source/drain regions composed of the first region and a fourth region and a channel forming region composed of a surface region of the third region, and (3) a junction-field-effect transistor of a first conductivity type for current control having gate regions composed of the fourth region and a portion of the first region facing the fourth region, a channel region composed of the third region sandwiched by the fourth region and the first region and source/drain regions composed of the third region.

BACKGROUND OF THE INVENTION AND RELATED ART STATEMENT

The present invention relates to a semiconductor memory cell comprising at least 3 transistors, a transistor for read-out, a transistor for write-in and a junction-field-effect transistor for current control, a semiconductor memory cell comprising a transistor for read-out, a transistor for write-in, a junction-field-effect transistor for current control and at least 1 diode, a semiconductor memory cell comprising at least 4 transistors, a transistor for read-out, a transistor for write-in, a junction-field-effect transistor for current control and a third transistor for write-in, or a semiconductor memory cell comprising a transistor for read-out, a transistor for write-in, a junction-field-effect transistor for current control, a third transistor for write-in and at least 1 diode, and a method of manufacturing the above semiconductor memory cell.

As a high-density semiconductor memory cell, there has been made available a dynamic semiconductor memory cell that can be said to be a single-transistor semiconductor memory cell including one transistor and one capacitor shown in FIG. 56. In the above semiconductor memory cell, an electric charge stored in the capacitor is required to be large enough to generate a sufficiently large voltage change on a bit line. However, as the planar dimensions of the semiconductor memory cell are reduced, the capacitor formed in a parallel planar shape decreases in size, which causes a new problem that, when information which is stored as an electric charge in the capacitor of the memory cell is read out, the read-out information is buried in noise, or that only a small voltage change is generated on the bit line since the stray capacitance of the bit line increases each time a new generation of the semiconductor memory cell is introduced. As means for solving the above problems, there has been proposed a dynamic semiconductor memory cell having a trench capacitor cell structure shown in FIG. 57 or a stacked capacitor cell structure. Since, however, the fabrication-related technology has its own limits on the depth of the trench (or the groove) or the height of the stack, the capacitance of the capacitor is also limited. For this reason, dynamic semiconductor memory cells having the above structures are said to reach the limit of dimensions smaller than those of the low sub-micron rules unless expensive new materials are introduced for the capacitor.

In the planar dimensions smaller than those of the low sub-micron rule, the transistor constituting the semiconductor memory cell also has problems of deterioration of the dielectric strength characteristic and punchthrough. There is therefore a large risk that current leakage arises even if the voltage applied to the semiconductor memory cell is still within a predetermined range. When a semiconductor memory cell is made infinitesimal in size, therefore, it is difficult to normally operate the semiconductor memory cell having a conventional transistor structure.

For overcoming the above limit problems of the capacitor, the present applicant has proposed a semiconductor memory cell comprising two transistors or two transistors physically merged into one unit, as is disclosed in Japanese Patent Application No. 246264/1993 (Japanese Patent Laid-open No. 99251/1995), corresponding to U.S. Pat. No. 5,428,238. The semiconductor memory cell shown in FIGS. 15 (A) and 15 (B) of Japanese Patent Laid-Open No. 99251/1995 comprises a first semi-conductive region SC₁ of a first conductivity type formed in a surface region of a semiconductor substrate or formed on an insulating substrate, a first conductive region SC₂ formed in a surface region of the first semi-conductive region SC₁ so as to form a rectifier junction together with the first semi-conductive region SC₁, a second semi-conductive region SC₃ of a second conductivity type formed in a surface region of the first semi-conductive region SC₁ and spaced from the first conductive region SC₂, a second conductive region SC₄ formed in a surface region of the second semi-conductive region SC₃ so as to form a rectifier junction together with the second semi-conductive region SC₃, and a conductive gate G formed on a barrier layer so as to bridge the first semi-conductive region SC₁ and the second conductive region SC₄ and so as to bridge the first conductive region SC₂ and the second semi-conductive region SC₃, the conductive gate G being connected to a first memory-cell-selecting line, the first conductive region SC₂ being connected to an information write-in setting line, and the second conductive region SC₄ being connected to a second memory-cell-selecting line.

The first semi-conductive region SC₁ (to function as a channel forming region Ch₂), the first conductive region SC₂ (to function as one source/drain region), the second semi-conductive region SC₃ (to function as the other source/drain region) and the conductive gate G constitute a switching transistor TR₂. On the other hand, the second semi-conductive region SC₃ (to function as a channel forming region Ch₁), the first semi-conductive region SC₁ (to function as one source/drain region), the second conductive region SC₄ (to function as the other source/drain region) and the conductive gate G constitute an information storing transistor TR₁.

When information is written in the above semiconductor memory cell, the switching transistor TR₂ is brought into an on-state. As a result, the information is stored in the channel forming region Ch₁ of the information storing transistor TR₁ as a potential or as an electric charge. When the information is read out, a threshold voltage of the information storing transistor TR₁ seen from the conductive gate G varies, depending upon the potential or the electric charge stored in the channel forming region Ch₁ of the information storing transistor TR₁. Therefore, when the information is read out, the storage state of the information storing transistor TR₁ can be judged from the magnitude of a channel current (including a zero magnitude) by applying a properly selected potential to the conductive gate G. The information is read out by detecting the operation state of the information storing transistor TR₁.

That is, when the information is read out, the information storing transistor TR₁ is brought into an on-state or an off-state, depending upon the information stored therein. Since the second conductive region SC₄ is connected to the second memory-cell-selecting line, a large current or a small current may flow in the information storing transistor TR₁, depending upon the stored information ("0" or "1"). In this way, the information stored in the semiconductor memory cell can be read out by utilizing the information storing transistor TR₁.

However, when the information is read out, the semiconductor memory cell has no mechanism for controlling the current which flows through the first semi-conductive region SC₁ sandwiched by the first conductive region SC₂ and the second semi-conductive region SC₃. Therefore, when the information stored in the information storing transistor TR₁ is detected with the conductive gate G, only a small margin of the current which flows between the first semi-conductive region SC₁ and the second conductive region SC₄ is obtained, which causes a problem that the number of the semiconductor memory cells connected to the second memory-cell-selecting line (a bit line) is limited.

OBJECT AND SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a semiconductor memory cell which attains the stable performance of transistors, a large window (current difference) for reading out information stored therein and permits infinitesimal dimensions or to provide a logic semiconductor memory cell.

Further, it is an object of the present invention to provide a semiconductor memory cell comprising at least 3 transistors, a transistor for read-out, a transistor for write-in and a junction-field-effect transistor for current control, or a semiconductor memory cell comprising a transistor for read-out, a transistor for write-in, a junction-field-effect transistor for current control and at least 1 diode.

Further, it is another object of the present invention to provide a semiconductor memory cell comprising at least 4 transistors, a transistor for read-out, a transistor for write-in, a junction-field-effect transistor for current control and a third transistor for write-in, or a semiconductor memory cell comprising a transistor for read-out, a transistor for write-in, a junction-field-effect transistor for current control, a third transistor for write-in and at least 1 diode.

It is further another object of the present invention to provide a semiconductor memory cell having the above various transistors and diode merged into one, and a process for the manufacture thereof.

As shown in principle drawings of FIGS. 1A, 1B, 5a, 16A and 16B, for achieving the above object, according to a first aspect of the present invention, there is provided a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type for current control,

wherein:

(A-1) one source/drain region of the first transistor TR₁ is connected to a predetermined potential,

(A-2) the other source/drain region of the first transistor TR₁ has a common region with one source/drain region of the junction-field-effect transistor TR₃,

(A-3) a gate region G₁ of the first transistor TR₁ is connected to a first memory-cell-selecting line,

(B-1) one source/drain region of the second transistor TR₂ is connected to a second memory-cell-selecting line,

(B-2) the other source/drain region of the second transistor TR₂ has a common region with a channel forming region CH₁ of the first transistor TR₁ and with a first gate region of the junction-field-effect transistor TR₃,

(B-3) a gate region G₂ of the second transistor TR₂ is connected to the first memory-cell-selecting line,

(C-1) a second gate region of the junction-field-effect transistor TR₃ faces the first gate region thereof through a channel region CH₃ thereof, the channel region CH₃ thereof being an extended region of the other source/drain region of the first transistor TR₁, and

(C-2) the other source/drain region of the junction-field-effect transistor TR₃ is positioned in the extended region of the other source/drain region of the first transistor TR₁ via the channel region CH₃.

As shown in a principle drawing of FIG. 1A, the semiconductor memory cell according to the first aspect of the present invention preferably has a configuration in which the second gate region of the junction-field-effect transistor TR₃ is connected to a second predetermined potential, and the other source/drain region of the junction-field-effect transistor TR₃ is connected to an information read-out line. Alternatively, as shown in a principle drawing of FIG. 1B, the semiconductor memory cell preferably has a configuration in which the second gate region of the junction-field-effect transistor TR₃ is connected to a second predetermined potential, and a junction portion of the other source/drain region of the junction-field-effect transistor TR₃ and one source/drain region of the second transistor TR₂ forms a diode D. Alternatively, as shown in a principle drawing of FIG. 5, the semiconductor memory cell may further comprise a diode D, and preferably has a configuration in which the second gate region of the junction-field-effect transistor TR₃ is connected to a second predetermined potential and in which the other source/drain region of the junction-field-effect transistor TR₃ is connected to the second predetermined potential through the diode D. In the drawings, the first memory-cell-selecting line is referred to as "1ST LINE", and the second memory-cell-selecting line is referred to as "2ND LINE".

Further, as shown in a principle drawing of FIG. 7, the semiconductor memory cell according to the first aspect of the present invention preferably has a configuration in which the first gate region and the second gate region of the junction-field-effect transistor TR₃ are connected to each other, a junction portion of the other source/drain region of the junction-field-effect transistor TR₃ and one source/drain region of the second transistor TR₂ forms a diode D, and one end of the diode D is connected to the second memory-cell-selecting line.

Further, as shown in principle drawings of FIGS. 16A and 16B, the semiconductor memory cell preferably has a configuration in which one source/drain region of the second transistor TR₂ has a common region with the second gate region of the junction-field-effect transistor TR₃. In this case, as shown in FIG. 16A, the semiconductor memory cell preferably has a configuration in which one source/drain region of the second transistor TR₂ and the second gate region of the junction-field-effect transistor TR₃ are connected to the second memory-cell-selecting line, and the other source/drain region of the junction-field-effect transistor TR₃ is connected to an information read-out line. Alternatively, as shown in FIG. 16B, the semiconductor memory cell preferably has a configuration in which one source/drain region of the second transistor TR₂ and the second gate region of the junction-field-effect transistor TR₃ are connected to the second memory-cell-selecting line, a diode D is formed in the other source/drain region of the junction-field-effect transistor TR₃, and one end of the diode D is connected to the second memory-cell-selecting line.

As shown in principle drawings of FIGS. 10 and 21, for achieving the above object, according to a second aspect of the present invention, there is provided a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, a junction-field-effect transistor TR₃ of a first conductivity type for current control, and a diode D,

wherein:

(A-1) one source/drain region of the first transistor TR₁ has a common region with one source/drain region of the junction-field-effect transistor TR₃,

(A-2) the other source/drain region of the first transistor TR₁ is connected to a second memory-cell-selecting line through the diode D,

(A-3) a gate region G₁ of the first transistor TR₁ is connected to a first memory-cell-selecting line,

(B-1) one source/drain region of the second transistor TR₂ is connected to the second memory-cell-selecting line,

(B-2) the other source/drain region of the second transistor TR₂ has a common region with a channel forming region CH₁ of the first transistor TR₁ and with a first gate region of the junction-field-effect transistor TR₃,

(B-3) a gate region G₂ of the second transistor TR₂ is connected to the first memory-cell-selecting line,

(C-1) a second gate region of the junction-field-effect transistor TR₃ faces the first gate region thereof through a channel region CH₃ thereof, the channel region CH₃ thereof being an extended region of one source/drain region of the first transistor TR₁, and

(C-2) the other source/drain region of the junction-field-effect transistor TR₃ is positioned in an extended region of the other source/drain region of the first transistor TR₁ via the channel region CH₃, and is connected to a predetermined potential.

As shown in principle drawings of FIGS. 10 and 21, the semiconductor memory cell according to the second aspect of the present invention preferably has a configuration in which the second gate region of the junction-field-effect transistor TR₃ is connected to a second predetermined potential.

Alternatively, as shown in principle drawings of FIGS. 13 and 24, the semiconductor memory cell according to the second aspect of the present invention preferably has a configuration in which the second gate region of the junction-field-effect transistor TR₃ is connected to the first gate region thereof. As shown in principle drawings of FIGS. 29A and 29B, the semiconductor memory cell according to the second aspect of the present invention further may comprise a third transistor TR₄ of a second conductivity type for write-in, and preferably has a configuration in which the second gate region of the junction-field-effect transistor TR₃ is connected to the first gate region thereof through the third transistor TR₄.

For achieving the above object, according to a third aspect of the present invention, there is provided a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type for current control,

said semiconductor memory cell having;

(a) a first semi-conductive region SC₁ having a second conductivity type,

(b) a second semi-conductive or conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ forming a rectifier junction together with the first region SC₁,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having a first conductivity type,

(d) a fourth semi-conductive or conductive region SC₄ formed in a surface region of the third region SC₃, said fourth region SC₄ forming a rectifier junction together with the third region SC₃, and

(e) a fifth semi-conductive or conductive region SC₅ formed in a surface region of the third region SC₃ and spaced from the fourth region SC₄, said fifth region SC₅ forming a rectifier junction together with the third region SC₃,

wherein;

(A-1) source/drain regions of the first transistor TR₁ are constituted of the second region SC₂ and the third region SC₃,

(A-2) a channel forming region CH₁ of the first transistor TR₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

(A-3) a gate region G₁ of the first transistor TR₁ is formed on a barrier layer formed on the surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

(B-1) source/drain regions of the second transistor TR₂ are constituted of the first region SC₁ and the fourth region SC₄,

(B-2) a channel forming region CH₂ of the second transistor TR₂ is constituted of a surface region of the third region SC₃ sandwiched by the first region SC₁ and the fourth region SC₄,

(B-3) a gate region G₂ of the second transistor TR₂ is formed on a barrier layer formed on the surface region of the third region SC₃ sandwiched by the first region SC₁ and the fourth region SC₄,

(C-1) gate regions of the junction-field-effect transistor TR₃ are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ of the junction-field-effect transistor TR₃ is constituted of part of the third region SC₃ sandwiched by the fifth region SC₅ and said portion of the first region SC₁,

(C-3) source/drain regions of the junction-field-effect transistor TR₃ are constituted of the third region SC₃ extending from both ends of the channel region CH₃ of the junction-field-effect transistor TR₃,

(D) the gate region G₁ of the first transistor TR₁ and the gate region G₂ of the second transistor TR₂ are connected to a first memory-cell-selecting line,

(E) the second region SC₂ is connected to a predetermined potential,

(F) the fourth region SC₄ is connected to a second memory-cell-selecting line, and

(G) the fifth region SC₅ is connected to a second predetermined potential.

In a variant of the semiconductor memory cell according to the third aspect of the present invention, the fifth region SC₅ may be connected to the first region SC₁, in place of being connected to the second predetermined potential.

The semiconductor memory cell according to the third aspect of the present invention including the above variant preferably has a configuration in which a junction portion of the third region SC₃ and the fourth region SC₄ forms a diode D, and one source/drain region of the junction-field-effect transistor TR₃ is connected to the second memory-cell-selecting line through the diode D.

Further, the semiconductor memory cell according to the third aspect of the present invention preferably has a configuration in which a diode D is formed on the surface region of the third region SC₃ corresponding to (or functioning as) one source/drain region of the junction-field-effect transistor TR₃, and one source/drain region of the junction-field-effect transistor TR₃ is connected to the second predetermined potential through the diode D.

For achieving the above object, according to a fourth aspect of the present invention, there is provided a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type for current control,

said semiconductor memory cell having;

(a) a first semi-conductive region SC₁ having a second conductivity type,

(b) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having a first conductivity type,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having the first conductivity type,

(d) a fourth semi-conductive or conductive region SC₄ formed in a surface region of the third region SC₃, said fourth region SC₄ forming a rectifier junction together with the third region SC₃, and

(e) a fifth semi-conductive or conductive region SC₅ formed in a surface region of the second region SC₂, said fifth region SC₅ forming a rectifier junction together with the second region SC₂,

wherein;

(A-1) source/drain regions of the first transistor TR₁ are constituted of the second region SC₂ and the third region SC₃,

(A-2) a channel forming region CH₁ of the first transistor TR₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

(A-3) a gate region G₁ of the first transistor TR₁ is formed on a barrier layer formed on the surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

(B-1) source/drain regions of the second transistor TR₂ are constituted of the first region SC₁ and the fourth region SC₄,

(B-2) a channel forming region CH₂ of the second transistor TR₂ is constituted of a surface region of the third region SC₃ sandwiched by the first region SC₁ and the fourth region SC₄,

(B-3) a gate region G₂ of the second transistor TR₂ is formed on a barrier layer formed on the surface region of the third region SC₃ sandwiched by the first region SC₁ and the fourth region SC₄,

(C-1) gate regions of the junction-field-effect transistor TR₃ are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ of the junction-field-effect transistor TR₃ is constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁,

(C-3) source/drain regions of the junction-field-effect transistor TR₃ are constituted of the second region SC₂ extending from both ends of the channel region CH₃ of the junction-field-effect transistor TR₃,

(D) the gate region G₁ of the first transistor TR₁ and the gate region G₂ of the second transistor TR₂ are connected to a first memory-cell-selecting line,

(E) the second region SC₂ is connected to a predetermined potential,

(F) the fourth region SC₄ is connected to a second memory-cell-selecting line, and

(G) the fifth region SC₅ is connected to a second predetermined potential.

In a variant of the semiconductor memory cell according to the fourth aspect of the present invention, the fifth region SC₅ may be connected to the first region SC₁, in place of being connected to the second predetermined potential.

The semiconductor memory cell according to the fourth aspect of the present invention including the above variant preferably has a configuration in which a junction portion of the third region SC₃ and the fourth region SC₄ forms a diode D, and one source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D.

For achieving the above object, according to a fifth aspect of the present invention, there is provided a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type for current control,

said semiconductor memory cell having;

(a) a first semi-conductive region SC₁ having a second conductivity type,

(b) a second semi-conductive or conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ forming a rectifier junction together with the first region SC₁,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having a first conductivity type,

(d) a fourth semi-conductive region SC₄ formed in a surface region of the third region SC₃, said fourth region SC₄ having the second conductivity type, and

(e) a gate region G shared by the first transistor TR₁ and the second transistor TR₂ and formed on a barrier layer so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the first region SC₁ and the fourth region SC₄,

wherein;

(A-1) source/drain regions of the first transistor TR₁ are constituted of the second region SC₂ and a surface region of the third region SC₃ which surface region is sandwiched by the first region SC₁ and the fourth region SC₄,

(A-2) a channel forming region CH₁ of the first transistor TR₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

(B-1) source/drain regions of the second transistor TR₂ are constituted of the first region SC₁ and the fourth region SC₄,

(B-2) a channel forming region CH₂ of the second transistor TR₂ is constituted of a surface region of the third region SC₃ which surface region corresponds to (or functions as) one source/drain region of the first transistor TR₁ and is sandwiched by the first region SC₁ and the fourth region SC₄,

(C-1) gate regions of the junction-field-effect transistor TR₃ are constituted of the fourth region SC₄ and a portion of the first region SC₁ facing the fourth region SC₄,

(C-2) a channel region CH₃ of the junction-field-effect transistor TR₃ is constituted of part of the third region SC₃ positioned under one source/drain region of the second transistor TR₂ and sandwiched by the first region SC₁ and the fourth region SC₄,

(C-3) one source/drain region of the junction-field-effect transistor TR₃ is constituted of a surface region of the third region SC₃ which surface region extends from one end of the channel region CH₃ of the junction-field-effect transistor TR₃, corresponds to (or functions as) one source/drain region of the first transistor TR₁, corresponds to (or functions as) the channel forming region CH₂ of the second transistor TR₂ and is sandwiched by the first region SC₁ and the fourth region SC₄,

(C-4) the other source/drain region of the junction-field-effect transistor TR₃ is constituted of the third region SC₃ extending from the other end of the channel region CH₃ of the junction-field-effect transistor TR₃,

(D) the gate region G is connected to a first memory-cell-selecting line,

(E) the second region SC₂ is connected to a predetermined potential, and

(F) the fourth region SC₄ is connected to a second memory-cell-selecting line.

The semiconductor memory cell according to the fifth aspect of the present invention further may have a fifth conductive region SC₅ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃, and preferably has a configuration in which a diode D is formed of the fifth region SC₅ and the third region SC₃ and in which the third region SC₃ corresponding to (or functioning as) the other source/drain region of the junction-field-effect transistor TR₃ is connected to the second memory-cell-selecting line through the diode D.

For achieving the above object, according to a sixth aspect of the present invention, there is provided a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type for current control,

said semiconductor memory cell having;

(a) a first semi-conductive region SC₁ having a second conductivity type,

(b) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having a first conductivity type,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having the first conductivity type,

(d) a fourth semi-conductive or conductive region SC₄ formed in a surface region of the third region SC₃, said fourth region SC₄ forming a rectifier junction together with the third region SC₃,

(e) a fifth semi-conductive or conductive region SC₅ formed in a surface region of the second regions SC₂, said fifth region SC₅ forming a rectifier junction together with the second region SC₂, and

(f) a gate region G shared by the first transistor TR₁ and the second transistor TR₂ and formed on a barrier layer so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the first region SC₁ and the fourth region SC₄,

wherein;

(A-1) source/drain regions of the first transistor TR₁ are constituted of the second region SC₂ and a surface region of the third region SC₃ which surface region is sandwiched by the first region SC₁ and the fourth region SC₄,

(A-2) a channel forming region CH₁ of the first transistor TR₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

(B-1) source/drain regions of the second transistor TR₂ are constituted of the first region SC₁ and the fourth region SC₄,

(B-2) a channel forming region CH₂ of the second transistor TR₂ is constituted of a surface region of the third region SC₃ which surface region corresponds to (or functions as) one source/drain region of the first transistor TR₁ and is sandwiched by the first region SC₁ and the fourth region SC₄,

(C-1) gate regions of the junction-field-effect transistor TR₃ are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ of the junction-field-effect transistor TR₃ is constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁,

(C-3) one source/drain region of the junction-field-effect transistor TR₃ is constituted of the second region SC₂ which extends from one end of the channel region CH₃ of the junction-field-effect transistor TR₃ and corresponds to (or functions as) one source/drain region of the first transistor TR₁,

(C-4) the other source/drain region of the junction-field-effect transistor TR₃ is constituted of the second region SC₂ extending from the other end of the channel region CH₃ of the junction-field-effect transistor TR₃,

(D) the gate region G is connected to a first memory-cell-selecting line,

(E) the second region SC₂ is connected to a predetermined potential,

(F) the fourth region SC₄ is connected to a second memory-cell-selecting line, and

(G) the fifth region SC₅ is connected to a second predetermined potential.

The semiconductor memory cell according to the sixth aspect of the present invention further may have a sixth conductive region SC₆ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃, and preferably has a configuration in which a diode D is formed of the sixth region SC₆ and the third region SC₃ and in which the third region SC₃ corresponding to (or functioning as) the other source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D.

Further, a variant of the semiconductor memory cell according to the sixth aspect of the present invention preferably has a configuration in which the fifth region SC₅ is connected to the first region SC₁, in place of being connected to the second predetermined potential. In this case, the semiconductor memory cell further may have a sixth conductive region SC₆ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃, and preferably has a configuration in which a diode D is formed of the sixth region SC₆ and the third region SC₃ and in which the third region SC₃ corresponding to (or functioning as) the other source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D.

For achieving the above object, according to a seventh aspect of the present invention, there is provided a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, a junction-field-effect transistor TR₃ of a first conductivity type for current control, and a third transistor TR₄ of a second conductivity type for write-in,

said semiconductor memory cell having;

(a) a first semi-conductive region SC₁ having a second conductivity type,

(b) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having a first conductivity type,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having the first conductivity type,

(d) a fourth semi-conductive or conductive region SC₄ formed in a surface region of the third region SC₃, said fourth region SC₄ forming a rectifier junction together with the third region SC₃,

(e) a fifth semi-conductive or conductive region SC₅ formed in a surface region of the second region SC₂, said fifth region SC₅ forming a rectifier junction together with the second region SC₂, and

(f) a gate region G shared by the first transistor TR₁, the second transistor TR₂ and the third transistor TR₄ and formed on a barrier layer so as to bridge the first region SC₁ and the fourth region SC₄, so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the third region SC₃ and the fifth region SC₅,

wherein;

(A-1) source/drain regions of the first transistor TR₁ are constituted of the second region SC₂ and a surface region of the third region SC₃ which surface region is sandwiched by the first region SC₁ and the fourth region SC₄,

(A-2) a channel forming region CH₁ of the first transistor TR₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

(B-1) source/drain regions of the second transistor TR₂ are constituted of the first region SC₁ and the fourth region SC₄,

(B-2) a channel forming region CH₂ of the second transistor TR₂ is constituted of a surface region of the third region SC₃ which surface region corresponds to (or functions as) one source/drain region of the first transistor TR₁ and is sandwiched by the first region SC₁ and the fourth region SC₄,

(C-1) gate regions of the junction-field-effect transistor TR₃ are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ of the junction-field-effect transistor TR₃ is constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁,

(C-3) one source/drain region of the junction-field-effect transistor TR₃ is constituted of the second region SC₂ which extends from one end of the channel region CH₃ of the junction-field-effect transistor TR₃ and corresponds to (or functions as) one source/drain region of the first transistor TR₁,

(C-4) the other source/drain region of the junction-field-effect transistor TR₃ is constituted of the second region SC₂ extending from the other end of the channel region CH₃ of the junction-field-effect transistor TR₃,

(D-1) one source/drain region of the third transistor TR₄ is constituted of the surface region of the first region SC₁ corresponding to (or functioning as) the channel forming region CH₁ of the first transistor TR₁,

(D-2) the other source/drain region of the third transistor TR₄ is constituted of the fifth region SC₅,

(D-3) a channel forming region CH₄ of the third transistor TR₄ is constituted of the second region SC₂ corresponding to (or functioning as) one source/drain region of the first transistor TR₁,

(E) the gate region G is connected to a first memory-cell-selecting line,

(F) the second region SC₂ is connected to a predetermined potential, and

(G) the fourth region SC₄ is connected to a second memory-cell-selecting line.

For achieving the above object, according to a eighth aspect of the present invention, there is provided a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type for current control,

said semiconductor memory cell having;

(a) a third semi-conductive region SC₃ having a first conductivity type,

(b) a fourth semi-conductive or conductive region SC₄ formed in a surface region of the third region SC₃, said fourth region SC₄ forming a rectifier junction together with the third region SC₃,

(c) a first semi-conductive region SC₁ formed in a surface region of the third region SC₃ and spaced from the fourth region SC₄, said first region SC₁ having a second conductivity type,

(d) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having the first conductivity type,

(e) a fifth semi-conductive or conductive region SC₅ formed in a surface region of the second region SC₂, said fifth region SC₅ forming a rectifier junction together with the second region SC₂, and

(f) a gate region G shared by the first transistor TR₁ and the second transistor TR₂ and formed on a barrier layer so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the first region SC₁ and the fourth region SC₄,

wherein;

(A-1) source/drain regions of the first transistor TR₁ are constituted of the second region SC₂ and the third region SC₃,

(A-2) a channel forming region CH₁ of the first transistor TR₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

(B-1) source/drain regions of the second transistor TR₂ are constituted of the first region SC₁ and the fourth region SC₄,

(B-2) a channel forming region CH₂ of the second transistor TR₂ is constituted of a surface region of the third region SC₃ sandwiched by the first region SC₁ and the fourth region SC₄,

(C-1) gate regions of the junction-field-effect transistor TR₃ are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ of the junction-field-effect transistor TR₃ is constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁,

(C-3) source/drain regions of the junction-field-effect transistor TR₃ are constituted of the second region SC₂ extending from both ends of the channel region CH₃ of the junction-field-effect transistor TR₃,

(D) the gate region G is connected to a first memory-cell-selecting line,

(E) the second region SC₂ is connected to a predetermined potential,

(F) the fourth region SC₄ is connected to a second memory-cell-selecting line, and

(G) the fifth region SC₅ is connected to a second predetermined potential.

The semiconductor memory cell according to the eighth aspect of the present invention may have a configuration in which the fifth region SC₅ is connected to the first region SC₁, in place of being connected to the second predetermined potential. Further, the semiconductor memory cell according to the eighth aspect of the present invention may have a configuration in which a junction portion of the third region SC₃ and the fourth region SC₄ forms a diode D, and one source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D. Further, the semiconductor memory cell according to the eighth aspect of the present invention may have a sixth conductive region SC₆ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃, and preferably has a configuration in which a diode D is formed of the sixth region SC₆ and the third region SC₃ and in which the third region SC₃ corresponding to (or functioning as) the other source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D.

For achieving the above object, according to a ninth aspect of the present invention, there is provided a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, a junction-field-effect transistor TR₃ of a first conductivity type for current control, and a third transistor TR₄ of a second conductivity type for write-in,

said semiconductor memory cell having;

(a) a third semi-conductive region SC₃ having a first conductivity type,

(b) a fourth semi-conductive or conductive region SC₄ formed in a surface region of the third region SC₃, said fourth region SC₄ forming a rectifier junction together with the third region SC₃,

(c) a first semi-conductive region SC₁ formed in a surface region of the third region SC₃ and spaced from the fourth region SC₄, said first region SC₁ having a second conductivity type,

(d) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having the first conductivity type,

(e) a fifth semi-conductive or conductive region SC₅ formed in a surface region of the second region SC₂, said fifth region SC₅ forming a rectifier junction together with the second region SC₂, and

(f) a gate region G shared by the first transistor TR₁, the second transistor TR₂ and the third transistor TR₄ and formed on a barrier layer so as to bridge the first region SC₁ and the fourth region SC₄, so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the third region SC₃ and the fifth region SC₅,

wherein;

(A-1) source/drain regions of the first transistor TR₁ are constituted of the second region SC₂ and a surface region of the third region SC₃ which surface region is sandwiched by the first region SC₁ and the fourth region SC₄,

(A-2) a channel forming region CH₁ of the first transistor TR₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

(B-1) source/drain regions of the second transistor TR₂ are constituted of the first region SC₁ and the fourth region SC₄,

(B-2) a channel forming region CH₂ of the second transistor TR₂ is constituted of a surface region of the third region SC₃ which surface region corresponds to (or functions as) one source/drain region of the first transistor TR₁ and is sandwiched by the first region SC₁ and the fourth region SC₄,

(C-1) gate regions of the junction-field-effect transistor TR₃ are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ of the junction-field-effect transistor TR₃ is constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁,

(C-3) one source/drain region of the junction-field-effect transistor TR₃ is constituted of the second region SC₂ which extends from one end of the channel region CH₃ of the junction-field-effect transistor TR₃ and corresponds to (or functions as) one source/drain region of the first transistor TR₁,

(C-4) the other source/drain region of the junction-field-effect transistor TR₃ is constituted of the second region SC₂ extending from the other end of the channel region CH₃ of the junction-field-effect transistor TR₃,

(D-1) one source/drain region of the third transistor TR₄ is constituted of the surface region of the first region SC₁ corresponding to (or functioning as) the channel forming region CH₁ of the first transistor TR₁,

(D-2) the other source/drain region of the third transistor TR₄ is constituted of the fifth region SC₅,

(D-3) a channel forming region CH₄ of the third transistor TR₄ is constituted of the second region SC₂ corresponding to (or functioning as) one source/drain region of the first transistor TR₁,

(E) the gate region G is connected to a first memory-cell-selecting line,

(F) the second region SC₂ is connected to a predetermined potential, and

(G) the fourth region SC₄ is connected to a second memory-cell-selecting line.

The semiconductor memory cell according to the ninth aspect of the present invention may have a configuration in which a junction portion of the third region SC₃ and the fourth region SC₄ forms a diode D, and one source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D. Further, the semiconductor memory cell according to the ninth aspect of the present invention may have a sixth conductive region SC₆ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃, and preferably has a configuration in which a diode D is formed of the sixth region SC₆ and the third region SC₃ and in which the third region SC₃ corresponding to (or functioning as) the other source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D.

The semiconductor memory cell of the present invention can be formed in a surface region of a semiconductor substrate, on an insulating layer formed on a semiconductor substrate, in a well of the second conductivity type formed in a semiconductor substrate (in the first to seventh aspects of the present invention), in a well of the first conductivity type formed in a semiconductor substrate (in the eighth and ninth aspects of the present innovation), or on an electric insulator, and is preferably formed in a well or formed on an insulator including an insulating layer and an insulating substrate for preventing α-ray soft error.

The junction-field-effect transistor (JFET) TR₃ in the semiconductor memory cell of the present invention can be formed by

(1) optimizing the distance between the facing gate regions of the junction-field-effect transistor TR₃, that is, the thickness of the channel region CH₃, and

(2) optimizing impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃. It should be noted that if neither the distance between the facing gate regions (the thickness of the channel region CH₃) of the junction-field-effect transistor TR₃, nor the impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃ are optimized, the depletion layer will not widened, making it impossible to bring the junction-field-effect transistor TR₃ into an on-state or an off-state. These optimization need to be carried out by computer simulation or experiments.

For achieving the above object, according to the first aspect of the present invention, there is provided a method for manufacturing a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type for current control,

said semiconductor memory cell having;

(a) a first semi-conductive region SC₁ having a second conductivity type,

(b) a second semi-conductive or conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ forming a rectifier junction together with the first region SC₁,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having a first conductivity type,

(d) a fourth semi-conductive region SC₄ formed in a surface region of the third region SC₃, said fourth region SC₄ having the second conductivity type, and

(e) a gate region G shared by the first transistor TR₁ and the second transistor TR₂ and formed on a barrier layer so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the first region SC₁ and the fourth region SC₄,

the first transistor TR₁ having;

(A-1) source/drain regions constituted of the second region SC₂ and a surface region of the third region SC₃ which surface region is sandwiched by the first region SC₁ and the fourth region SC₄, and

(A-2) a channel forming region CH₁ constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

the second transistor TR₂ having;

(B-1) source/drain regions constituted of the first region SC₁ and the fourth region SC₄, and

(B-2) a channel forming region CH₂ constituted of a surface region of the third region SC₃ which surface region corresponds to (or functions as) one source/drain region of the first transistor TR₁ and is sandwiched by the first region SC₁ and the fourth region SC₄, and

the junction-field-effect transistor TR₃ having;

(C-1) gate regions constituted of the fourth region SC₄ and a portion of the first region SC₁ facing the fourth region SC₄,

(C-2) a channel region CH₃ constituted of part of the third region SC₃ positioned under one source/drain region of the second transistor TR₂ and sandwiched by the first region SC₁ and the fourth region SC₄,

(C-3) one source/drain region constituted of a surface region of the third region SC₃ which surface region extends from one end of the channel region CH₃ of the junction-field-effect transistor TR₃, corresponds to (or functions as) one source/drain region of the first transistor TR₁, corresponds to (or functions as) the channel forming region CH₂ of the second transistor TR₂ and is sandwiched by the first region SC₁ and the fourth region SC₄, and

(C-4) the other source/drain region constituted of the third region SC₃ extending from the other end of the channel region CH₃ of the junction-field-effect transistor TR₃,

said method comprising;

(1) forming the barrier layer on the surface of the first region SC₁, and then, forming the gate region G on the barrier layer, and

(2) forming the first region SC₁, the third region SC₃ and the fourth region SC₄ by ion implantation in an arbitrary order so as to optimize a distance between the facing gate regions of the junction-field-effect transistor TR₃ and so as to optimize impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃.

For achieving the above object, according to the second aspect of the present invention, there is provided a method for manufacturing a semiconductor memory cell comprising a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type for current control,

said semiconductor memory cell having;

(a) a first semi-conductive region SC₁ having a second conductivity type,

(b) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having a first conductivity type,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having the first conductivity type,

(d) a fourth semi-conductive or conductive region SC₄ formed in a surface region of the third region SC₃, said fourth region SC₄ forming a rectifier junction together with the third region SC₃,

(e) a fifth semi-conductive or conductive region SC₅ formed in a surface region of the second region SC₂, said fifth region SC₅ forming a rectifier junction together with the second region SC₂, and

(f) a gate region G shared by the first transistor TR₁ and the second transistor TR₂ and formed on a barrier layer so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the first region SC₁ and the fourth region SC₄,

the first transistor TR₁ having;

(A-1) source/drain regions constituted of the second region SC₂ and a surface region of the third region SC₃ which surface region is sandwiched by the first region SC₁ and the fourth region SC₄, and

(A-2) a channel forming region CH₁ constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃,

the second transistor TR₂ having;

(B-1) source/drain regions constituted of the first region SC₁ and the fourth region SC₄, and

(B-2) a channel forming region CH₂ constituted of a surface region of the third region SC₃ which surface region corresponds to (or functions as) one source/drain region of the first transistor TR₁ and is sandwiched by the first region SC₁ and the fourth region SC₄, and

the junction-field-effect transistor TR₃ having;

(C-1) gate regions constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁,

(C-3) one source/drain region constituted of the second region SC₂ which extends from one end of the channel region CH₃ of the junction-field-effect transistor TR₃ and corresponds to (or functions as) one source/drain region of the first transistor TR₁, and

(C-4) the other source/drain region constituted of the second region SC₂ extending from the other end of the channel region CH₃ of the junction-field-effect transistor TR₃,

said method comprising;

(1) forming the barrier layer on the surface of the first region SC₁, and then, forming the gate region G on the barrier layer, and

(2) forming the first region SC₁, the second region SC₂ and the fifth region SC₅ by ion implantation in an arbitrary order so as to optimize a distance between the facing gate regions of the junction-field-effect transistor TR₃ and so as to optimize impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃.

In the semiconductor memory cell according to any one of the third to ninth aspects of the present invention, a region SC₇ containing a high concentration of an impurity having the first conductivity type is preferably formed under the first region SC₁, for increasing a potential or an electric charge stored in the channel forming region CH₁ of the first transistor TR₁.

The channel forming region or the channel region can be formed from a material such as silicon or GaAs by using a known process. Each gate region can be formed of a material such as a metal, a silicide, GaAs doped with an impurity at a high concentration, silicon, amorphous silicon or polysilicon doped with an impurity, or a polyside by using a known process. The barrier layer can be formed of a material such as SiO₂, Si₃ N₄, Al₂ O₃ or GaAlAs by using a known process. Each region can be formed of silicon, amorphous silicon or polysilicon doped with an impurity, a silicide, a two-layer structure having a silicide layer and a semi-conductive layer, or GaAs doped with an impurity at a high concentration by using a known process, depending on characteristics required.

When each region in the semiconductor memory cell according to any one of the third to ninth aspects of the present invention is constituted of a conductive region, it can be formed of a silicide, a metal such as Mo or Al, or a metal compound. When the sixth conductive region SC₆ is formed in the semiconductor memory cell according to the third aspect of the present invention, preferably, the fifth region SC₅ is constituted of a semi-conductive region. Further, when the sixth conductive region SC₆ is formed in the semiconductor memory cell according to the sixth or seventh aspect of the present invention, preferably, the fourth region SC₄ is constituted of a semi-conductive region. Moreover, when the sixth conductive region SC₆ is formed in the semiconductor memory cell according to the eighth or ninth aspect of the present invention, preferably, the fourth region SC₄ is constituted of a semi-conductive region.

In the semiconductor memory cell of the present invention, each gate region of the first transistor TR₁ and the second transistor TR₂ is connected to the first memory-cell-selecting line. It is therefore sufficient to provide one first memory-cell-selecting line, so that the chip area can be decreased.

In the semiconductor memory cell according to the third aspect or the fourth aspect of the present invention, the first region SC₁ corresponding to (or functioning as) one source/drain region of the second transistor TR₂ corresponds to (or functions as) the channel forming region CH₁ of the first transistor TR₁. When information is written in, the second transistor TR₂ is brought into an on-state, and as a result, the information is stored in the channel forming region CH₁ of the first transistor TR₁ as a potential or an electric charge. When the information is read out, the threshold voltage of the first transistor TR₁ seen from the gate region varies depending upon the potential or the electric charge (the information) stored in the channel forming region CH₁ of the first transistor TR₁. Therefore, when the information is read out, the storage state of the first transistor TR₁ can be judged from the magnitude of a channel current (including a zero magnitude) by applying a properly selected potential to the gate region. That is, the information is read out by detecting the operation state of the first transistor TR₁.

In the semiconductor memory cell according to any one of the fifth to ninth aspects of the present invention, the first region SC₁ corresponding to (or functioning as) one source/drain region of the second transistor TR₂ corresponds to (or functions as) the channel forming region CH₁ of the first transistor TR₁. Further, the third region SC₃ corresponding to (or functioning as) the channel forming region CH₂ of the second transistor TR₂ and corresponding to (or functioning as) the source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line, for example, through the diode D, or connected to the information read-out line. And, a potential in the second memory-cell-selecting line is properly selected, whereby the threshold voltage of the first transistor TR₁ seen from the gate region can be allowed to vary at a read-out time. As a result, the on- and off-states of the first transistor TR₁ and the second transistor TR₂ can be controlled by properly selecting a potential in the first memory-cell-selecting line.

That is, when the potential of the first memory-cell-selecting line of the semiconductor memory cell of the present invention is set at a potential at which the second transistor TR₂ is sufficiently brought into an on-state at a write-in time, an electric charge is charged in a capacitor formed between the first region SC₁ and the third region SC₃ in the second transistor TR₂ depending upon the potential of the second memory-cell-selecting line. As a result, information is stored in the channel forming region CH₁ (the first region SC₁) of the first transistor TR₁ as a potential difference between the first region SC₁ and the third region SC₃ or as an electric charge. When the information is read out, the potential of the third region SC₃ is set at a read-out potential, and in the first transistor TR₁, the potential or the electric charge (the information) stored in the channel forming region CH₁ is converted to a potential difference between the first region SC₁ corresponding to (or functioning as) the channel forming region CH₁ and the second region SC₂ corresponding to (or functioning as) the source/drain region or to an electric charge. As a result, the threshold voltage of the first transistor TR₁ seen from the gate region varies depending upon the above potential difference or electric charge (the information). When the information is read out, therefore, the on/off operation of the first transistor TR₁ can be controlled by applying a properly selected potential to the gate region. That is, the information can be read out by detecting the operation state of the first transistor TR₁.

Moreover, the semiconductor memory cell of the present invention is provided with the junction-field-effect transistor TR₃ in addition to the first transistor TR₁ and the second transistor TR₂. Since the on/off operation of the junction-field-effect transistor TR₃ is controlled when the information is read out, a large margin can be left for the current which flows between the second region SC₂ and the third region SC₃. As a result, the number of semiconductor memory cells that can be connected to the second memory-cell-selecting line is hardly limited, and further, the information holding time (retention time) of the semiconductor memory cell can be increased.

Further, when the diode D is provided, the information read-out line connected to the other source/drain region of the junction-field-effect transistor TR₃ can be omitted. Meanwhile, when the diode is constituted of a pn junction in the semiconductor memory cell of the present invention, and if the potential setting in each region constituting the diode or the designing of impurity concentration relationships in each region is improper, "latch-up" may take place when the information is read out. Otherwise, a bipolar pnp transistor constituted of the fourth region SC₄, the third region SC₃ and the first region SC₁ is brought into an on-state, and the information stored in the first region SC₁ may leak. For avoiding the above problems, the voltage which is applied to the second memory-cell-selecting line when the information is read out is required to be a low degree of voltage (0.4 volt or lower in a case of a pn junction) at which no large forward current flows in the junction portion of the fourth region SC₄ and the third region SC₃. The above problems can be overcome, for example, by a method in which the fifth region SC₅ in the semiconductor memory cell according to the fifth aspect of the present invention or the sixth region SC₆ in the semiconductor memory cell according to the sixth or seventh aspect of the present invention is formed in the surface region of the third region SC₃, a silicide, a metal or a metal compound is used to constitute the fifth region SC₅ or the sixth region SC₆, and the junction between the fifth region SC₅ or the sixth region SC₆ in an embodiment according to the above aspect of the present invention and the third region SC₃ is formed as a junction in which a larger number of carriers mainly constitute a forward current like a Schottky junction. That is, the fifth region SC₅ or the sixth region SC₆ in an embodiment according to the above aspect of the present invention is constituted of a silicide layer, a metal layer formed of Mo, Al or the like, or a metal compound layer, and a diode of a Schottky junction type is formed, whereby the risk of latch-up can be avoided, and the limitation on the voltage applied to the second memory-cell-selecting line is no longer necessary, or the information retention time can be increased. In some case, the fifth region SC₅ and the sixth region SC₆ in embodiments according to the above aspects of the present invention may be constituted of a semiconductor layer of the second conductivity type, and a diode of a pn junction type may be formed.

The semiconductor memory cell of the present invention retains the information as a potential, a potential difference or an electric charge, while leak current caused by junction leak, etc., attenuates them sooner or later. It is therefore necessary to refresh it, and the semiconductor memory cell is operated like DRAM.

In the semiconductor memory cell according to any one of the first to ninth aspects of the present invention, the wiring configuration can be simplified by connecting the fifth region SC₅ to the first region SC₁. In the embodiments according to the fifth to ninth aspects of the present invention, further, the first transistor TR₁ and the second transistor TR₂ are merged into one unit, and the cell area and the leak current can be decreased.

In the semiconductor memory cell according to the seventh or ninth aspect of the present invention, the third transistor TR₄ for write-in is provided in addition to the junction-field-effect transistor TR₃, and when the information is read out, the on/off operation of the third transistor TR₄ is controlled. A very large margin can be therefore reliably provided for a current which flows between the second region SC₂ and the third region SC₃. As a result, the limitation on the number of semiconductor memory cells that can be connected to the second memory-cell-selecting line can be further decreased.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be explained in detail with reference to drawings hereinafter.

FIGS. 1A and 1B show the principles of the semiconductor memory cell according to the first and third aspect of the present invention.

FIG. 2 is a schematic partial cross-sectional view of a semiconductor memory cell in Example 1.

FIG. 3 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 1.

FIG. 4 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 1.

FIG. 5 shows another principle different from that in FIGS. 1A and 1B with regard to the semiconductor memory cell according to the first and third aspects of the present invention.

FIG. 6 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 1.

FIG. 7 shows another principle different from that in FIGS. 1A and 1B with regard to the semiconductor memory cell according to the first and third aspects of the present invention.

FIGS. 8A, 8B and 8C are schematic partial cross-sectional views and a schematic layout of a variant of the semiconductor memory cell in Example 1.

FIGS. 9A, 9B and 9C are schematic partial cross-sectional views and a schematic layout of a variant of the semiconductor memory cell in Example 1.

FIG. 10 shows the principle of the semiconductor memory cell according to the second and fourth aspects of the present invention or the second and sixth aspects of the present invention.

FIGS. 11A and 11B are a schematic partial cross-sectional view and a schematic layout of a semiconductor memory cell in Example 2.

FIGS. 12A and 12B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 2.

FIG. 13 shows another principle different from that in FIG. 10 with regard to the semiconductor memory cell according to the second and fourth aspects of the present invention.

FIGS. 14A, 14B and 14C are schematic partial cross-sectional views and a schematic layout of a variant of the semiconductor memory cell in Example 2.

FIGS. 15A, 15B and 15C are schematic partial cross-sectional views and a schematic layout of a variant of the semiconductor memory cell in Example 2.

FIGS. 16A and 16B show the principles of the semiconductor memory cell according to the first and fifth aspects of the present invention.

FIG. 17 is a schematic partial cross-sectional view of a semiconductor memory cell in Example 3.

FIGS. 18A and 18B are schematic partial cross-sectional views of variants of the semiconductor memory cell in Example 3.

FIGS. 19A and 19B are a schematic partial cross-sectional view and a schematic layout of a semiconductor memory cell in Example 4.

FIGS. 20A and 20B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 4.

FIG. 21 shows the principle of the semiconductor memory cell according to the second and sixth aspects of the present invention.

FIGS. 22A and 22B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 4.

FIGS. 23A and 23B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 4.

FIG. 24 shows another principle of the semiconductor memory cell according to the second and sixth aspects of the present invention.

FIGS. 25A and 25B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 4.

FIGS. 26A and 26B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 4.

FIGS. 27A and 27B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 4.

FIGS. 28A and 28B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 4.

FIGS. 29A and 29B show the principles of the semiconductor memory cell according to the second and seventh aspects of the present invention.

FIGS. 30A and 30B are a schematic partial cross-sectional view and a schematic layout of a semiconductor memory cell in Example 5.

FIGS. 31A and 31B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 5.

FIGS. 32A and 32B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 5.

FIGS. 33A and 33B are a schematic partial cross-sectional view and a schematic layout of a variant of the semiconductor memory cell in Example 5.

FIGS. 34A and 34B are schematic partial cross-sectional views of a silicon semiconductor substrate, etc., for the explanation of a manufacturing method of the semiconductor memory cell in Example 1.

FIGS. 35A and 35B, subsequent to FIG. 34B, are schematic partial cross-sectional views of a silicon semiconductor substrate, etc., for the explanation of a manufacturing method of the semiconductor memory cell in Example 1.

FIGS. 36A, 36B and 36C are schematic partial cross-sectional views of a silicon semiconductor substrate, etc., for the explanation of a manufacturing method of the semiconductor memory cell in Example 3.

FIGS. 37A and 37B, subsequent to FIG. 36C, are schematic partial cross-sectional views of a silicon semiconductor substrate, etc., for the explanation of a manufacturing method of the semiconductor memory cell in Example 3.

FIG. 38 is a schematic partial cross-sectional view of a semiconductor memory cell in Example 6.

FIG. 39 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 40 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 41 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 42 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 43 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 44 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 45 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 46 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 47 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 48 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 49 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 6.

FIG. 50 is a schematic partial cross-sectional view of a semiconductor memory cell in Example 7.

FIG. 51 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 7.

FIG. 52 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 7.

FIG. 53 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 7.

FIG. 54 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 7.

FIG. 55 is a schematic partial cross-sectional view of a variant of the semiconductor memory cell in Example 7.

FIG. 56 schematically shows a conventional one-transistor memory cell.

FIG. 57 schematically shows a conventional memory cell having a trench capacitor structure.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Example 1

Example 1 is directed to the semiconductor memory cell according to the first and third aspects of the present invention. For example, as FIG. 1B shows its principle and as FIG. 2 shows its schematic partial cross sectional view, the semiconductor memory cell of Example 1 comprises a first transistor TR₁ of a first conductivity type (e.g., n-type) for read-out, a second transistor TR₂ of a second conductivity type (e.g., p-type) for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type (e.g., n-type) for current control. In Example 1, the first transistor TR₁ is composed of one transistor, the second transistor TR₂ is composed of another transistor, and the junction-field-effect transistor TR₃ is composed of a further another transistor. That is, the semiconductor memory cell in Example 1 has three transistors.

Concerning the first transistor TR₁ ;

(A-1) one source/drain region is connected to a predetermined potential,

(A-2) the other source/drain region has a common region with one source/drain region of the junction-field-effect transistor TR₃, and

(A-3) a gate region G₁ is connected to a first memory-cell-selecting line, for example, a word line.

Further, concerning the second transistor TR₂ ;

(B-1) one source/drain region is connected to a second memory-cell-selecting line, for example, a bit line,

(B-2) the other source/drain region has a common region with a channel forming region CH₁ of the first transistor TR₁ and with a first gate region of the junction-field-effect transistor TR₃, and

(B-3) a gate region G₂ is connected to the first memory-cell-selecting line, for example, the word line.

Concerning the junction-field-effect transistor TR₃ ;

(C-1) a second gate region faces the first gate region thereof through a channel region CH₃ thereof, the channel region CH₃ thereof being an extended region of the other source/drain region of the first transistor TR₁, and

(C-2) the other source/drain region is positioned in the extended region of the other source/drain region of the first transistor TR₁ via the channel region CH₃.

In the semiconductor memory cell of Example 1, the second gate region of the junction-field-effect transistor TR₃ is connected to a second predetermined potential, and a junction portion of the other source/drain region of the junction-field-effect transistor TR₃ and one source/drain region of the second transistor TR₂ forms a diode D.

Otherwise, the semiconductor memory cell of Example 1 has;

(a) a first semi-conductive region SC₁ having a second conductivity type, for example, p-type,

(b) a second semi-conductive region SC₂ having an opposite conductivity type (a first conductivity type and for example, n⁺ -type) to the second conductivity type, or a second conductive region SC₂ formed of a silicide, metal or a metal compound, said second region SC₂ being formed in a surface region of the first region SC₁, and said second region SC₂ forming a rectifier junction together with the first region SC₁,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having the first conductivity type, for example, n⁺ -type,

(d) a fourth semi-conductive region SC₄ having the second conductivity type, for example, p⁺⁺ -type, or a fourth conductive region SC₄ formed of a silicide, a metal or a metal compound, said fourth region SC₄ being formed in a surface region of the third region SC₃, and said fourth region SC₄ forming a rectifier junction together with the third region SC₃, and

(e) a fifth semi-conductive region SC₅ having the second conductivity type, for example, p⁺⁺ -type, or a fifth conductive region SC₅ formed of a silicide, a metal or a metal compound, said fifth region SC₅ being formed in a surface region of the third region SC₃ and spaced from the fourth region SC₄, and said fifth region forming a rectifier junction together with the third region SC₃.

And, concerning the first transistor TR₁ ;

(A-1) source/drain regions are constituted of the second region SC₂ and the third region SC₃,

(A-2) a channel forming region CH₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃, and

(A-3) a gate region G₁ is formed on a barrier layer formed on the surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃.

On the other hand, concerning the second transistor TR₂ ;

(B-1) source/drain regions are constituted of the first region SC₁ and the fourth region SC₄,

(B-2) a channel forming region CH₂ is constituted of a surface region of the third region SC₃ sandwiched by the first region SC₁ and the fourth region SC₄, and

(B-3) a gate region G₂ is formed on a barrier layer formed on the surface region of the third region SC₃ sandwiched by the first region SC₁ and the fourth region SC₄.

Concerning the junction-field-effect transistor TR₃ ;

(C-1) gate regions are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ is constituted of part of the third region SC₃ sandwiched by the fifth region SC₅ and said portion of the first region SC₁, and

(C-3) source/drain regions are constituted of the third region SC₃ extending from both ends of the channel region CH₃ of the junction-field-effect transistor TR₃.

The junction-field-effect transistor TR₃ is formed by (1) optimizing the distance between the facing gate regions of the junction-field-effect transistor TR₃, that is, the thickness of the channel region CH₃, and (2) optimizing impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃.

The semiconductor memory cell of Example 1, more specifically, the first region SC₁ is formed in a well of the second conductivity type, for example, p-type, formed in a semiconductor substrate.

And the gate region G₁ of the first transistor TR₁ (to be referred to as "first gate region G₁ ", hereinafter) and the gate region G₂ of the second transistor TR₂ (to be referred to as "second gate region G₂ ", hereinafter) are connected to the first memory-cell-selecting line, for example, the word line. Further, the second region SC₂ is connected to the predetermined potential, the fourth region SC₄ is connected to the second memory-cell-selecting line, for example, the bit line, and the fifth region SC₅ is connected to the second predetermined potential.

Further, a junction portion of the third region SC₃ and the fourth region SC₄ forms a diode D, and one source/drain region of the junction-field-effect transistor TR₃ is connected to the second memory-cell-selecting line, for example, the bit line, through the diode D.

When a region SC₇ containing a high concentration of an impurity having the first conductivity type is preferably formed under the first region SC₁, a potential or an electric charge stored in the channel forming region CH₁ of the first transistor TR₁ can be increased.

The method for manufacturing the semiconductor memory cell of Example 1 will be explained with reference to FIGS. 34A, 34B, 35A and 35B, hereinafter.

[Step-100]

First, a first region SC₁ of the second conductivity type (e.g., p-type) is formed in a silicon semiconductor substrate of the first conductivity type (e.g., n-type) by an ion-implanting method (see FIG. 34A). The first semi-conductive region SC₁ of the second conductivity type (e.g., p-type) corresponds to a p-type well. Preferably, a region SC₇ having the first conductivity type (e.g., n-type) and containing a high concentration of an impurity is formed under the first region SC₁ before or after the formation of the first region SC₁.

[Step-110]

Then, an about 10 nm thick gate oxide layer corresponding to a barrier layer is formed on the surface of the silicon semiconductor substrate, e.g., by a thermal oxidation method, and then a polysilicon layer doped with an impurity is deposited on an entire surface by a CVD method. A patterned resist is formed on the above polysilicon layer, and the polysilicon layer is patterned using the resist as a mask, to form a first gate region G₁ and a dummy pattern. Then, a region containing an n-type impurity is formed in a surface region of the first region SC₁ containing a p⁺ -type impurity by ion-implanting an n-type impurity. Thereafter, for example, an SiN layer is formed on an entire surface, and then anisotropically etched to form sidewalls on the side walls of the first gate region G₁ and the dummy pattern. Then, a thin oxide layer is formed, and an ion-implantation with a high concentration of an n-type impurity is carried out. In the above manner, as shown in FIG. 34B, the second semi-conductive region SC₂ which has the first conductivity type (for example, n⁺ -type) and forms the rectifier junction together with the first region SC₁ can be formed in the surface region of the first region SC₁, and the third semi-conductive region SC₃ which is spaced from the second region SC₂ and has the first conductivity type, for example, n⁺ -type can be formed in the surface region of the first region SC₁.

[Step-120]

Then, a patterned resist is formed, and the dummy pattern, the sidewalls on the side walls of the dummy pattern and the barrier layer under the dummy pattern are removed with using the resist as a mask. Then, a gate oxide layer corresponding to a barrier layer and the second gate region G₂ formed of polysilicon doped with an impurity are formed, whereby a structure shown in FIG. 35A is obtained.

[Step-130]

Then, a patterned resist is formed, and then ion-implantation with a p-type impurity is carried out with using the resist as a mask, and the resist is removed. In this manner, as shown in FIG. 35B, the fourth semi-conductive region SC₄ which has the second conductivity type, for example, p⁺⁺ -type and forms a rectifier junction together with the third region SC₃, can be formed in the surface region of the third region SC₃, and the fifth semi-conductive region SC₅ which has the second conductivity type (for example, p⁺⁺ -type), is spaced from the fourth region SC₄ and forms a rectifier junction together with the third region SC₃, can be formed in the surface region of the third region SC₃.

[Step-140]

Then, an insulation interlayer is formed on an entire surface, opening portions are formed in the insulation interlayer, and a wiring-material layer is formed on the insulation interlayer. Then, the wiring-material layer is patterned to form each line. In the above manner, a semiconductor memory cell of Example 1 as shown in FIG. 2 can be produced.

FIGS. 3, 4, 6, 8A to 8C and 9A to 9C show variants of the semiconductor memory cell of Example 1. The semiconductor memory cell shown in FIG. 3 has a so-called SOI structure, formed on an insulator formed, e.g., of SiO₂. The above semiconductor memory cell can be formed in a so-called bonded substrate produced by forming a convex portion in a semiconductor substrate (a starting substrate), depositing an insulator (insulating layer) on an entire surface, attaching the insulator (insulating layer) and a supporting substrate to each other, and grinding and polishing the semiconductor substrate (the starting substrate) from its back surface. In another method, for example, a silicon semiconductor substrate is ion-implanted with oxygen and then, heat-treated to obtain an insulator (insulating layer) according to an SIMOX method, and the semiconductor memory cell can be formed in a silicon layer remaining thereon. In further another method, for example, an amorphous silicon layer or a polysilicon layer is deposited on an insulator (insulating layer) by a CVD method, then, a silicon layer is formed by any one of known single-crystallization methods such as a zone melting crystallization method using laser beam or electron beam and a lateral solid phase epitaxy method in which a crystal is grown through an opening formed in an insulator (insulating layer), and the semiconductor memory cell can be formed in the above silicon layer.

Further, a semiconductor memory cell shown in FIG. 4 can be obtained by depositing, for example, a polysilicon layer or an amorphous silicon layer on an insulator (insulating layer) deposited on a supporting substrate, and manufacturing the same semiconductor memory cell as that of Example 1 in the above polysilicon layer or amorphous silicon layer. The above semiconductor memory cell has a so-called TFT structure.

In a semiconductor memory cell shown in FIG. 6 (see FIG. 5 for its principle), a diode D is formed in a surface region of the third region SC₃ corresponding to (or functioning as) one source/drain region of the junction-field-effect transistor TR₃. That is, the semiconductor memory cell further has a sixth conductive region SC₆ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃, and has a configuration in which the diode D is formed of the sixth region SC₆ and the third region SC₃ and in which one source/drain region of the junction-field-effect transistor TR₃ is connected to the second predetermined potential through the diode D. The above sixth region SC₆ may have the same constitution as that of the sixth region SC₆ of the semiconductor memory cell according to the sixth aspect of the present invention. In the above constitution, the fifth region SC₅ is preferably to be a semi-conductive region.

A semiconductor memory cell whose schematic cross-sectional view is shown in FIG. 8A (see FIG. 7 for its principle) is a variant of the semiconductor memory cell shown in FIG. 2. The fifth region SC₅ is connected to the first region SC₁, in place of being connected to the second predetermined potential. FIG. 8B schematically shows a layout of each region and the gate region. Further, FIG. 8C shows a cross-sectional view of each region taken along a line C--C in FIG. 8B. The fifth region SC₅ and the first region SC₁ can be connected to each other, e.g., by providing a structure in which part of the first region SC₁ is extended up to the vicinity of the surface of the semiconductor substrate so that the fifth region SC₅ and the extending portion of the first region SC₁ come in contact with each other outside the third region SC₃ as shown in FIGS. 8B and 8C. The wiring configuration of the semiconductor memory cell can be simplified by structuring the semiconductor memory cell as explained above. There may be formed a structure in which a junction portion of the third region SC₃ and the fourth region SC₄ constitutes a diode D and one source/drain region of the junction-field-effect transistor TR₃ is connected to the second memory-cell-selecting line through the diode D.

A semiconductor memory cell shown in FIGS. 9A, 9B and 9C (see FIG. 7 for its principle) is a variant of the semiconductor memory cell shown in FIG. 3, and further, it is a variant of the semiconductor memory cell shown in FIGS. 8A, 8B and 8C. The above semiconductor memory cell has a so-called SOI structure in which it is formed on an insulator composed, e.g., of SiO₂. In addition, a semiconductor memory cell having a so-called TFT structure can be also obtained by depositing, e.g., a polysilicon layer or an amorphous silicon layer on an insulator (insulating layer) formed on a supporting substrate and then forming a semiconductor memory cell on the polysilicon layer or the amorphous silicon layer.

Example 2

Example 2 is directed to the semiconductor memory cell according to the second and fourth aspects of the present invention. As FIG. 10 shows its principle and as FIGS. 11A and 11B show its schematic partial cross-sectional view and layout, the semiconductor memory cell of Example 2 comprises a first transistor TR₁ of a first conductivity type (for example, n-type) for read-out, a second transistor TR₂ of a second conductivity type (for example, p-type) for write-in, a junction-field-effect transistor TR₃ of a first conductivity type (for example, n-type) for current control, and a diode D. In Example 2 as well, the first transistor TR₁ is composed of one transistor, the second transistor TR₂ is composed of another transistor, and the junction-field-effect transistor TR₃ is composed of a further another transistor. That is, the semiconductor memory cell of Example 2 has three transistors. The semiconductor memory cell of Example 2 differs from the semiconductor memory cell of Example 1 in that the fifth region SC₅ is formed in a surface region of the second region SC₂.

Concerning the first transistor TR₁ ;

(A-1) one source/drain region has a common region with one source/drain region of the junction-field-effect transistor TR₃,

(A-2) the other source/drain region is connected to a second memory-cell-selecting line, for example, a bit line, through the diode D, and

(A-3) a gate region G₁ is connected to a first memory-cell-selecting line, for example, a word line.

Further, concerning the second transistor TR₂ ;

(B-1) one source/drain region is connected to the second memory-cell-selecting line, for example, the bit line,

(B-2) the other source/drain region has a common region with a channel forming region CH₁ of the first transistor TR₁ and with a first gate region of the junction-field-effect transistor TR₃, and

(B-3) a gate region G₂ is connected to the first memory-cell-selecting line, for example, the word line.

Concerning the junction-field-effect transistor TR₃ ;

(C-1) a second gate region faces the first gate region of the junction-field-effect transistor TR₃ through a channel region CH₃ of the junction-field-effect transistor TR₃, the channel region CH₃ being an extended region of one source/drain region of the first transistor TR₁, and

(C-2) the other source/drain region is positioned in an extended region of the other source/drain region of the first transistor TR₁ via the channel region CH₃, and is connected to a predetermined potential.

In the semiconductor memory cell of Example 2, the second gate region of the junction-field-effect transistor TR₃ is connected to a second predetermined potential, and a junction portion of the other source/drain region of the first transistor TR₁ and one source/drain region of the second transistor TR₂ formed the diode D.

Otherwise, the semiconductor memory cell of Example 2 (see FIGS. 11A and 11B) has;

(a) a first semi-conductive region SC₁ having a second conductivity type, for example, p-type,

(b) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having a first conductivity type, for example, n⁺ -type,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having the first conductivity type, for example, n⁺ -type,

(d) a fourth semi-conductive region SC₄ having the second conductivity type, for example, p⁺⁺ -type, or a fourth conductive region SC₄ formed of a silicide, a metal or a metal compound, said fourth region SC₄ being formed in a surface region of the third region SC₃, and said fourth region SC₄ forming a rectifier junction together with the third region SC₃, and

(e) a fifth semi-conductive region SC₅ having the second conductivity type, for example, p⁺⁺ -type, or a fifth conductive region SC₅ formed of a silicide, a metal or a metal compound, said fifth region SC₅ being formed in a surface region of the second region SC₂, and said fifth region SC₅ forming a rectifier junction together with the second region SC₂.

Concerning the first transistor TR₁ ;

(A-1) source/drain regions are constituted of the second region SC₂ and the third region SC₃,

(A-2) a channel forming region CH₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃, and

(A-3) a gate region G₁ is formed on a barrier layer formed on the surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃.

Concerning the second transistor TR₂ ;

(B-1) source/drain regions are constituted of the first region SC₁ and the fourth region SC₄,

(B-2) a channel forming region CH₂ is constituted of a surface region of the third region SC₃ sandwiched by the first region SC₁ and the fourth region SC₄, and

(B-3) a gate region G₂ is formed on a barrier layer formed on the surface region of the third region SC₃ sandwiched by the first region SC₁ and the fourth region SC₄.

Further, concerning the junction-field-effect transistor TR₃ ;

(C-1) gate regions are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ is constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁, and

(C-3) source/drain regions are constituted of the second region SC₂ extending from both ends of the channel region CH₃ of the junction-field-effect transistor TR₃.

The junction-field-effect transistor TR₃ is formed by (1) optimizing the distance between the facing gate regions of the junction-field-effect transistor TR₃, that is, the thickness of the channel region CH₃, and (2) optimizing impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃.

The semiconductor memory cell of Example 2, more specifically, the first region SC₁ is formed in a well of the second conductivity type, for example, p-type, formed in a semiconductor substrate.

The gate region G₁ (first gate region G₁) of the first transistor TR₁ and the gate region G₂ (second gate region G₂) of the second transistor TR₂ are connected to the first memory-cell-selecting line (e.g., the word line). Further, the second region SC₂ is connected to the predetermined potential, the fourth region SC₄ is connected to the second memory-cell-selecting line (e.g., the bit line), and the fifth region SC₅ is connected to the second predetermined potential.

Further, a junction portion of the third region SC₃ and the fourth region SC₄ forms a diode D, and the third region SC₃ corresponding to (or functioning as) one source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line (e.g., the bit line) through the diode D.

When a region SC₇ containing a high concentration of an impurity having the first conductivity type is preferably formed under the first region SC₁, a potential or an electric charge stored in the channel forming region CH₁ of the first transistor TR₁ can be increased.

The method of manufacturing the semiconductor memory cell of Example 2 can be substantially the same as the method of manufacturing the semiconductor memory cell of Example 1 except for a position where the fifth region SC₅ is to be formed. The detailed explanation thereof is therefore omitted.

A semiconductor memory cell shown in FIGS. 12A and 12B (see FIG. 10 for its principle) is a variant of the semiconductor memory cell shown in FIGS. 11A and 11B, and has a so-called SOI structure in which it is formed on an insulator formed, e.g., of SiO₂. In addition, a semiconductor memory cell having a so-called TFT structure can be obtained as well by depositing, for example, a polysilicon layer or an amorphous silicon layer on an insulator (insulating layer) formed on a supporting substrate, and then manufacturing a semiconductor memory cell in the above polysilicon layer or amorphous silicon layer.

Further, in a semiconductor memory cell shown in FIGS. 14A to 14C and FIGS. 15A to 15C (see FIG. 13 for its principle), the fifth region SC₅ is connected to the first region SC₁, in place of being connected to the second predetermined potential. FIGS. 14A and 15A schematically show its partial cross-sectional view, and FIGS. 14B and 15B schematically show the layout of each region and the gate region. Further, FIGS. 14C and 15C show schematic cross-sectional views taken along lines C--C in FIGS. 14B and 15B. The fifth region SC₅ and the first region SC₁ can be connected to each other, e.g., by providing a structure in which part of the first region SC₁ is extended up to the vicinity of the surface of the semiconductor substrate so that the fifth region SC₅ and the extending portion of the first region SC₁ come in contact with each other outside the second region SC₂. The wiring configuration of the semiconductor memory cell can be simplified by structuring the semiconductor memory cell as explained above.

Example 3

Example 3 is directed to the semiconductor memory cell according to the first and fifth aspect of the present invention, and is further directed to the method of manufacturing the semiconductor memory cell according to the first aspect of the present invention. The semiconductor memory cell of Example 3 differs from the semiconductor memory cell of Example 1 in the following point. In the semiconductor memory cell of Example 1, one semiconductor memory cell is constituted of 3 transistors and 1 diode. In contrast, in the semiconductor memory cell of Example 3, one semiconductor memory cell is constituted of 3 transistors merged into 1 transistor and 1 diode.

As FIG. 16B shows its principle and as FIG. 17 schematically shows one example of its partial cross-sectional view, the semiconductor memory cell of Example 3 comprises a first transistor TR₁ of a first conductivity type (for example, n-type) for read-out, a second transistor TR₂ of a second conductivity type (for example, p-type) for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type (for example, n-type) for current control. The semiconductor memory cell has;

(a) a first semi-conductive region SC₁ having a second conductivity type, for example, p-type,

(b) a second semi-conductive region SC₂ having an opposite conductivity type (first conductivity type and for example, n⁺ -type) to the second conductivity type, or a second conductive region SC₂ formed of a silicide, a metal or a metal compound, said second region SC₂ being formed in a surface region of the first region SC₁, and said second region SC₂ forming a rectifier junction together with the first region SC₁,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having the first conductivity type, for example, n⁺ -type,

(d) a fourth semi-conductive region SC₄ formed in a surface region of the third region SC₃, said fourth region SC₄ having the second conductivity type, for example, p⁺⁺ -type, and

(e) a gate region G shared by the first transistor TR₁ and the second transistor TR₂ and formed on a barrier layer so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the first region SC₁ and the fourth region SC₄.

Concerning the first transistor TR₁ ;

(A-1) source/drain regions are constituted of the second region SC₂ and a surface region of the third region SC₃ which surface region is sandwiched by the first region SC₁ and the fourth region SC₄, and

(A-2) a channel forming region CH₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃.

Concerning the second transistor TR₂ ;

(B-1) source/drain regions are constituted of the first region SC₁ and the fourth region SC₄, and

(B-2) a channel forming region CH₂ is constituted of a surface region of the third region SC₃ which surface region corresponds to (or functions as) one source/drain region of the first transistor TR₁ and is sandwiched by the first region SC₁ and the fourth region SC₄.

Further, concerning the junction-field-effect transistor TR₃ ;

(C-1) gate regions are constituted of the fourth region SC₄ and a portion of the first region SC₁ facing the fourth region SC₄,

(C-2) a channel region CH₃ is constituted of part of the third region SC₃ positioned under one source/drain region of the second transistor TR₂ and sandwiched by the first region SC₁ and the fourth region SC₄,

(C-3) one source/drain region is constituted of a surface region of the third region SC₃ which surface region extends from one end of the channel region CH₃ of the junction-field-effect transistor TR₃, corresponds to (or functions as) one source/drain region of the first transistor TR₁, corresponds to (or functions as) the channel forming region CH₂ of the second transistor TR₂ and is sandwiched by the first region SC₁ and the fourth region SC₄, and

(C-4) the other source/drain region is constituted of the third region SC₃ extending from the other end of the channel region CH₃ of the junction-field-effect transistor TR₃.

And, the gate region G is connected to a first memory-cell-selecting line (for example, a word line), the fourth region SC₄ is connected to a second memory-cell-selecting line (for example, a bit line), and the second region SC₂ is connected to a predetermined potential.

Further, the semiconductor memory cell of Example 3 has a fifth conductive region SC₅ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃, and has a configuration in which a diode D of Schottky junction type is formed of the fifth region SC₅ and the third region SC₃ and in which the third region SC₃ corresponding to (or functioning as) the other source/drain region of the junction-field-effect transistor TR₃ is connected to the second memory-cell-selecting line (for example, the bit line) through the diode D.

The semiconductor memory cell of Example 3, more specifically, the first region SC₁ is formed in a well of the second conductivity type, for example, p-type, formed in a semiconductor substrate.

The junction-field-effect transistor TR₃ is formed by (1) optimizing the distance between the facing gate regions of the junction-field-effect transistor TR₃, that is, the thickness of the channel region CH₃, and (2) optimizing impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃.

When a region SC₇ containing a high concentration of an impurity having the first conductivity type is preferably formed under the first region SC₁, a potential or an electric charge stored in the channel forming region CH₁ of the first transistor TR₁ can be increased.

The method of manufacturing the semiconductor memory cell of Example 3, will be explained with reference to FIGS. 36A, 36B, 36C, 37A and 37B, hereinafter.

[Step-300]

First, a first semi-conductive region SC₁ of a second conductivity type (e.g., p-type) is formed in a silicon semiconductor substrate of the first conductivity type (e.g., n-type) by an ion-implanting method (see FIG. 36A). The first region SC₁ of the second conductivity type (e.g., p-type) corresponds to a p-type well. Preferably, a region SC₇ having the first conductivity type (e.g., n-type) and containing a high concentration of an impurity is formed under the first region SC₁ before or after the formation of the first region SC₁.

[Step-310]

Then, an about 10 nm thick oxide layer (gate oxide layer) corresponding to a barrier layer is formed on the silicon semiconductor substrate surface, e.g., by a thermal oxidation method, and then a polysilicon layer doped with an impurity is deposited on an entire surface by a CVD method. A patterned resist is formed on the above polysilicon layer, and the polysilicon layer is patterned using the resist as a mask, to form a gate region G and a dummy pattern. Then, a region containing an n-type impurity is formed in a surface region of the first region SC₁ containing a p⁺ -type impurity by ion-implanting an n-type impurity. Thereafter, for example, an SiN layer is formed on an entire surface, and then anisotropically etched to form sidewalls on the side walls of the gate region G and the dummy pattern. Then, a thin oxide layer is formed, and an ion-implantation with a high concentration of an n-type impurity is carried out. In the above manner, as shown in FIG. 36B, the second semi-conductive region SC₂ which has an n⁺ conductivity type and forms a rectifier junction together with the first region SC₁ can be formed in a surface region of the first region SC₁, and the third semi-conductive region SC₃ which has the first conductivity type (for example, n⁺ -type) and is spaced from the second region SC₂ can be formed in a surface region of the first region SC₁.

[Step-320]

Then, a patterned resist is formed, and the dummy pattern, the sidewalls on the side walls of the dummy pattern and the barrier layer under the dummy pattern are removed with using the resist as a mask, whereby a structure shown in FIG. 36C is obtained.

[Step-330]

Then, a patterned resist is formed, and then ion-implantation with a p-type impurity is carried out with using the resist as a mask, and the resist is removed. In this manner, as shown in FIG. 37A, the fourth semi-conductive region SC₄ which has the second conductivity type (e.g., p⁺⁺ -type) and forms a rectifier junction together with the third region SC₃ can be formed in a surface region of the third region SC₃. In the above-explained ion-implanting methods, each of the first region SC₁, the third region SC₃ and the fourth region SC₄ is formed such that the distance between the facing gate regions of the junction-field-effect transistor TR₃ is optimized and that the impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃ are optimized. The above ion-implanting procedures may be carried out in any order.

[Step-340]

Then, a fifth conductive region SC₅ is formed in a surface region of the third region SC₃ for forming a diode of Schottky junction type (hetero-junction type). For example, a titanium silicide layer is formed in the surface region of the third region SC₃ (see FIG. 37B). The above titanium silicide layer can be formed, for example, by the following method. That is, for example, an insulation interlayer is deposited on an entire surface, and a portion of the insulation interlayer where the titanium silicide layer is to be formed is removed. Then, a titanium layer is deposited, by a sputtering method, on the insulation interlayer including an exposed surface of the silicon semiconductor substrate. Then, a first annealing treatment is carried out, and the titanium layer and the silicon semiconductor substrate are allowed to react to form a titanium silicide layer on the surface of the silicon semiconductor. Then, unreacted titanium layer on the insulation interlayer is removed, e.g., with NH₄ OH:H₂ O₂ :H₂ O, and a second annealing treatment is carried out, whereby a stable titanium silicide layer can be obtained. The material for forming the diode is not limited to titanium silicide, and it may be selected from materials such as cobalt silicide and tungsten silicide.

[Step-350]

Then, opening portions are formed in the insulation interlayer, a wiring-material layer is formed on the insulation interlayer, and the wiring-material layer is patterned to form various lines. In the above manner, the semiconductor memory cell of Example 3 shown in FIG. 17 can be produced.

FIGS. 18A and 18B show a variant of the semiconductor memory cell of Example 3. The semiconductor memory cell shown in FIG. 18A has a so-called SOI structure in which it is formed on an insulator formed, e.g., of SiO₂. The above semiconductor memory cell can be formed in a so-called bonded substrate produced by forming a convex portion in a semiconductor substrate (starting substrate), forming an insulator (insulating layer) on an entire surface, attaching the insulator (insulating layer) and a supporting substrate to each other, and grinding and polishing the semiconductor substrate (starting substrate) from its back surface. In another method, for example, a silicon semiconductor substrate is ion-implanted with oxygen and then, heat-treated to obtain an insulator (insulating layer) according to an SIMOX method, and the semiconductor memory cell can be formed in a silicon layer remaining thereon. In further another method, for example, an amorphous silicon layer or a polysilicon layer is deposited on an insulator (insulating layer) by a CVD method, then, a silicon layer is formed by any one of known single-crystallization methods such as a zone melting crystallization method using laser beam or electron beam and a lateral solid phase epitaxy method in which a crystal is grown through an opening formed in an insulator (insulating layer), and the semiconductor memory cell can be formed in the above silicon layer.

Further, a semiconductor memory cell shown in FIG. 18B can be obtained by forming, for example, a polysilicon layer or an amorphous silicon layer on an insulator (insulating layer) deposited on a supporting substrate, and then manufacturing the same semiconductor memory cell as that of Example 3 in the above polysilicon layer or amorphous silicon layer. The above semiconductor memory cell has a so-called TFT structure.

Example 4

Example 4 is directed to the semiconductor memory cell according to the second and sixth aspects of the present invention, and further to the method of manufacturing the semiconductor memory cell according to the second aspect of the present invention. The semiconductor memory cell of Example 4 differs from the semiconductor memory cell of Example 2 in the following point. In the semiconductor memory cell of Example 2, one semiconductor memory cell is composed of 3 transistors, while the semiconductor memory cell of Example 4 is composed of 1 transistor formed by merging the first transistor and the second transistor into 1 transistor.

As FIG. 10 shows its principle and as FIGS. 19A and 19B schematically show its partial cross-sectional view and layout, the semiconductor memory cell of Example 4 comprises a first transistor TR₁ of a first conductivity type (for example, n-type) for read-out, a second transistor TR₂ of a second conductivity type (for example, p-type) for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type (for example, n-type) for current control. And, the semiconductor memory cell has;

(a) a first semi-conductive region SC₁ having a second conductivity type, for example, p-type,

(b) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having a first conductivity type, for example, n⁺ -type opposite to the second conductivity type,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having the first conductivity type, for example, n⁺ -type,

(d) a fourth semi-conductive region SC₄ having the second conductivity type, for example, p⁺⁺ -type, or a fourth conductive region SC₄ formed of a silicide, a metal or a metal compound, which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃,

(e) a fifth semi-conductive region SC₅ having the second conductivity type, for example, p⁺⁺ -type, or a fifth conductive region SC₅ formed of a silicide, a metal or a metal compound, which is formed in a surface region of the second regions SC₂ and forms a rectifier junction together with the second region SC₂, and

(f) a gate region G shared by the first transistor TR₁ and the second transistor TR₂ and formed on a barrier layer so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the first region SC₁ and the fourth region SC₄.

Concerning the first transistor TR₁ ;

(A-1) source/drain regions are constituted of the second region SC₂ and a surface region of the third region SC₃ which surface region is sandwiched by the first region SC₁ and the fourth region SC₄, and

(A-2) a channel forming region CH₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃.

Concerning the second transistor TR₂ ;

(B-1) source/drain regions are constituted of the first region SC₁ and the fourth region SC₄, and

(B-2) a channel forming region CH₂ is constituted of a surface region of the third region SC₃ which surface region corresponds to (or functions as) one source/drain region of the first transistor TR₁ and is sandwiched by the first region SC₁ and the fourth region SC₄.

Further, concerning the junction-field-effect transistor TR₃ ;

(C-1) gate regions are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ is constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁,

(C-3) one source/drain region is constituted of the second region SC₂ which extends from one end of the channel region CH₃ of the junction-field-effect transistor TR₃ and corresponds to (or functions as) one source/drain region of the first transistor TR₁, and

(C-4) the other source/drain region is constituted of the second region SC₂ extending from the other end of the channel region CH₃ of the junction-field-effect transistor TR₃.

And, the gate region G is connected to a first memory-cell-selecting line, for example, a word line, the second region SC₂ is connected to a predetermined potential, the fourth region SC₄ is connected to a second memory cell-selecting line, for example, a bit line, and the fifth region SC₅ is connected to a second predetermined potential.

Further, a junction portion of the third region SC₃ and the fourth region SC₄ forms a diode D, and the third region SC₃ corresponding to (or functioning as) one source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line, for example, the bit line, through the diode D.

The semiconductor memory cell of Example 4, more specifically, the first region SC₁ is formed in a well of the second conductivity type, for example, p-type, formed in a semiconductor substrate.

The junction-field-effect transistor TR₃ is formed by (1) optimizing the distance between the facing gate regions of the junction-field-effect transistor TR₃, that is, the thickness of the channel region CH₃, and (2) optimizing impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃.

When a region SC₇ containing a high concentration of an impurity having the first conductivity type is preferably formed under the first region SC₁, a potential or an electric charge stored in the channel forming region CH₁ of the first transistor TR₁ can be increased.

A semiconductor memory cell shown in FIGS. 20A and 20B (see FIG. 10 for its principle) is a variant of the semiconductor memory cell shown in FIGS. 19A and 19B, and it has a so-called SOI structure in which it is formed on an insulator composed, e.g., of SiO₂. In addition, a semiconductor memory cell having a so-called TFT structure can be also obtained by forming, e.g., a polysilicon layer or an amorphous silicon layer on an insulator (insulating layer) formed on a supporting substrate and then forming the semiconductor memory cell on the polysilicon layer or the amorphous silicon layer.

In Example 4, as FIG. 21 shows a principle, as FIG. 22A shows a schematic partial cross-sectional view and as FIG. 22B shows a schematic layout, the semiconductor memory cell may have a sixth conductive region SC₆ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃, and has a configuration in which a diode D of Schottky junction type is formed of the sixth region SC₆ and the third region SC₃ and in which the third region SC₃ corresponding to (or functioning as) the other source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line, for example, the bit line, through the diode D. In the above structure, preferably, the fourth region SC₄ is a semi-conductive region.

A semiconductor memory cell shown in FIGS. 23A and 23B (see FIG. 21 for its principle) is a variant of the semiconductor memory cell shown in FIGS. 22A and 22B, and it has a so-called SOI structure in which it is formed on an insulator composed, e.g., of SiO₂. In addition, a semiconductor memory cell having a so-called TFT structure can be also obtained by forming, e.g., a polysilicon layer or an amorphous layer on an insulator (insulating layer) formed on a supporting substrate and then forming the semiconductor memory cell on the polysilicon layer or the amorphous silicon layer.

Further, in a semiconductor memory cell shown in FIGS. 25 to 28 (see FIG. 24 for its principle), the fifth region SC₅ is connected to the first region SC₁, in place of being connected to the second predetermined potential. FIGS. 25A, 26A, 27A and 28A show schematic cross-sectional views. FIGS. 25B, 26B, 27B and 28B shows schematic layouts of each region and the gate region. The fifth region SC₅ and the first region SC₁ can be connected to each other, e.g., by providing a structure in which part of the first region SC₁ is extended up to the vicinity of the surface of the semiconductor substrate so that the fifth region SC₅ and the extending portion of the first region SC₁ come in contact with each other outside the second region SC₂. The wiring configuration of the semiconductor memory cell can be simplified by structuring the semiconductor memory cell as explained above.

The semiconductor memory cell shown in FIGS. 25A and 25B is structurally the same as the semiconductor memory cell shown in FIGS. 19A and 19B except for the above points. Further, the semiconductor memory cell shown in FIGS. 26A and 26B is structurally the same as the semiconductor memory cell shown in FIGS. 20A and 20B except for the above points. The semiconductor memory cell shown in FIGS. 27A and 27B is structurally the same as the semiconductor memory cell shown in FIGS. 22A and 22B except for the above points. The semiconductor memory cell shown in FIGS. 28A and 28B is structurally the same as the semiconductor memory cell shown in FIGS. 23A and 23B except for the above points. Detailed explanations of structures of these semiconductors are therefore omitted.

The method of manufacturing the semiconductor memory cell of Example 4 can be substantially the same as the method of manufacturing the semiconductor memory cell of Example 3 except for the formation of the fifth region SC₅. Detailed explanations thereof are therefore omitted. In ion-implanting methods in a step similar to Step-330 in Example 3, each of the first region SC₁, the second region SC₂ and the fifth region SC₅ is formed such that the distance between the facing gate regions of the junction-field-effect transistor TR₃ is optimized and that the impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃ are optimized. Essentially, the above ion-implanting procedures may be carried out in any order.

Example 5

Example 5 is directed to the semiconductor memory cell according to the second and seventh aspects of the present invention and further to the method of the manufacture of a semiconductor memory cell according to the second aspect of the present invention. The semiconductor memory cell of Example 5 differs from the semiconductor memory cell of Example 4 in the following points. The semiconductor memory cell of Example 5 comprises a first transistor TR₁ of a first conductivity type for read-out, a second transistor TR₂ of a second conductivity type for write-in, a junction-field-effect transistor TR₃ of a first conductivity type for current control, and a third transistor TR₄ of a second conductivity type for write-in. Further, the semiconductor memory cell of Example 5 is structurally different from the semiconductor memory cell explained in Example 4 in the following points. A gate region G is shared by the first transistor TR₁, the second transistor TR₂ and the third transistor TR₄ and is formed on a barrier layer so as to bridge the first region SC₁ and the fourth region SC₄, so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the third region SC₃ and the fifth region SC₅. In addition, the first transistor TR₁, the second transistor TR₂ and the third transistor TR₄ are constituted of 1 transistor into which these transistors are merged.

As FIG. 29A shows a principle, as FIG. 30A shows a schematic partial cross-sectional view and as FIG. 30B shows a schematic layout, the semiconductor memory cell of Example 5 comprises a first transistor TR₁ of a first conductivity type (for example, n-type) for read-out, a second transistor TR₂ of a second conductivity type (for example, p-type) for write-in, a junction-field-effect transistor TR₃ of a first conductivity type (for example, n-type) for current control, and a third transistor TR₄ of a second conductivity type (for example, p-type) for write-in. And, the semiconductor memory cell has;

(a) a first semi-conductive region SC₁ having a second conductivity type, for example, p-type,

(b) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having a first conductivity type, for example, n⁺ -type,

(c) a third semi-conductive region SC₃ formed in a surface region of the first region SC₁ and spaced from the second region SC₂, said third region SC₃ having the first conductivity type, for example, n-type,

(d) a fourth semi-conductive region SC₄ having the second conductivity type, for example, p⁺⁺ -type, or a fourth conductive region SC₄ formed of a silicide, a metal or a metal compound, which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃,

(e) a fifth semi-conductive region SC₅ having the second conductivity type, for example, p⁺⁺ -type, or a fifth conductive region SC₅ formed of a silicide, a metal or a metal compound, which is formed in a surface region of the second region SC₂ and forms a rectifier junction together with the second region SC₂, and

(f) a gate region G shared by the first transistor TR₁, the second transistor TR₂ and the third transistor TR₄ and formed on a barrier layer so as to bridge the first region SC₁ and the fourth region SC₄, so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the third region SC₃ and the fifth region SC₅.

Concerning the first transistor TR₁ ;

(A-1) source/drain regions are constituted of the second region SC₂ (more specifically, a surface region of the second region SC₂ sandwiched by the first region SC₁ and the fifth region SC₅) and a surface region of the third region SC₃ which surface region is sandwiched by the first region SC₁ and the fourth region SC₄, and

(A-2) a channel forming region CH₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃.

Concerning the second transistor TR₂ ;

(B-1) source/drain regions are constituted of the first region SC₁ (more specifically, a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃) and the fourth region SC₄, and

(B-2) a channel forming region CH₂ is constituted of a surface region of the third region SC₃ which surface region corresponds to (or functions as) one source/drain region of the first transistor TR₁ and is sandwiched by the first region SC₁ and the fourth region SC₄.

Further, concerning the junction-field-effect transistor TR₃ ;

(C-1) gate regions are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ is constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁,

(C-3) one source/drain region is constituted of the second region SC₂ which extends from one end of the channel region CH₃ of the junction-field-effect transistor TR₃ and corresponds to (or functions as) one source/drain region of the first transistor TR₁, and

(C-4) the other source/drain region is constituted of the second region SC₂ extending from the other end of the channel region CH₃ of the junction-field-effect transistor TR₃.

Concerning the third transistor TR₄ ;

(D-1) one source/drain region is constituted of the surface region of the first region SC₁ corresponding to (or functioning as) the channel forming region CH₁ of the first transistor TR₁,

(D-2) the other source/drain region is constituted of the fifth region SC₅, and

(D-3) a channel forming region CH₄ is constituted of the second region SC₂ corresponding to (or functioning as) one source/drain region of the first transistor TR₁.

And, the gate region G is connected to a first memory-cell-selecting line, for example, a word line, the second region SC₂ is connected to a predetermined potential, and the fourth region SC₄ is connected to a second memory-cell-selecting line, for example, a bit line.

The semiconductor memory cell of Example 5, more specifically, the first region SC₁ is formed in a well of the second conductivity type, for example, p-type, formed in a semiconductor substrate.

The junction-field-effect transistor TR₃ is formed by (1) optimizing the distance between the facing gate regions of the junction-field-effect transistor TR₃, that is, the thickness of the channel region CH₃, and (2) optimizing impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃.

When a region SC₇ containing a high concentration of an impurity having the first conductivity type is preferably formed under the first region SC₁, a potential or an electric charge stored in the channel forming region CH₁ of the first transistor TR₁ can be increased.

A semiconductor memory cell shown in FIGS. 31A and 31B (see FIG. 29A for its principle) is a variant of the semiconductor memory cell shown in FIGS. 30A and 30B, and it has a so-called SOI structure in which it is formed on an insulator composed, e.g., of SiO₂. In addition, a semiconductor memory cell having a so-called TFT structure can be also obtained by depositing, e.g., a polysilicon layer or an amorphous silicon layer on an insulator (insulating layer) formed on a supporting substrate and then forming the semiconductor memory cell on the polysilicon layer or the amorphous silicon layer.

A semiconductor memory cell of Example 5 shown in FIGS. 32A and 32B and FIGS. 33A and 33B (see FIG. 29B for their principle) has a sixth conductive region SC₆ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃. A diode D of Schottky junction type is formed of the sixth region SC₆ and the third region SC₃ , and the third region SC₃ corresponding to (or functioning as) the other source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line, for example, the bit line, through the diode D. In the above structure, preferably, the fourth region SC₄ is a semi-conductive region.

The semiconductor memory cell shown in FIGS. 32A and 32B is structurally the same as the semiconductor shown in FIGS. 30A and 30B except for the above points. The semiconductor memory cell shown in FIGS. 33A and 33B is structurally the same as the semiconductor shown in FIGS. 31A and 31B except for the above points. Detailed explanations of structures of these semiconductor memory cells are therefore omitted.

In the semiconductor memory cell of Example 5, the potential in the third region SC₃ and the potential in the fifth region SC₅ are approximately equal to each other when the third transistor TR₄ is brought into an on-state, and the operation of the junction-field-effect transistor TR₃ is reliably controlled by the operation of the third transistor TR₄.

The semiconductor memory cell of Example 5 can be produced by carrying out steps similar to Step-300 to Step-330 for the production of the semiconductor memory cell of Example 3 (oblique ion-implanting is carried out for forming a channel forming region CH₁ and a channel forming region CH₂) and then forming a fifth region SC₅ in a surface region of the second region SC₂ by an ion-implanting method. Otherwise, the semiconductor memory cell can be also produced by the steps of forming a gate region G similar to that shown in FIGS. 37A and 37B, forming a fourth region SC₄, then further forming a gate region so as to cover a portion of the second region SC₂ adjacent to the surface region of the first region SC₁, and forming a fifth region SC₅. In ion-implanting methods in a step similar to Step-330 in Example 3, each of the first region SC₁, the second region SC₂ and the fifth region SC₅ is formed such that the distance between the facing gate regions of the junction-field-effect transistor TR₃ is optimized and that the impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃ are optimized. Essentially, the above ion-implanting procedures may be carried out in any order.

Example 6

Example 6 is directed to the semiconductor memory cell according to the second and eighth aspects of the present invention. The principle of the semiconductor memory cell in Example 6 is the same as that of the semiconductor memory cell in Example 4 of which the principle is shown in FIG. 10, while the constitution of each region in the semiconductor memory cell of Example 6 differs as shown in its schematic partial cross-sectional view of FIG. 38. However, the semiconductor memory cell of Example 6 is the same in that it is constituted of the first transistor and the second transistor merged into one unit.

The semiconductor memory cell of Example 6 comprises a first transistor TR₁ of a first conductivity type (for example, n-type) for read-out, a second transistor TR₂ of a second conductivity type (for example, p-type) for write-in, and a junction-field-effect transistor TR₃ of a first conductivity type (for example, n-type) for current control. And the semiconductor memory cell has;

(a) a third semi-conductive region SC₃ having a first conductivity type, for example, n-type,

(b) a fourth semi-conductive region SC₄ having a second conductivity type, for example, p⁺ -type, or a fourth conductive region SC₄ formed of a silicide, a metal or a metal compound, which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃,

(c) a first semi-conductive region SC₁ formed in a surface region of the third region SC₃ and spaced from the fourth region SC₄, said first region SC₁ having the second conductivity type, for example, p⁺ -type,

(d) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having the first conductivity type, for example, n⁺ -type,

(e) a fifth semi-conductive region SC₅ having the second conductivity type, for example, p⁺ -type, or a fifth conductive region SC₅ formed of a silicide, a metal or a metal compound, which is formed in a surface region of the second region SC₂ and forms a rectifier junction together with the second region SC₂, and

(f) a gate region G shared by the first transistor TR₁ and the second transistor TR₂ and formed on a barrier layer so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the first region SC₁ and the fourth region SC₄.

Concerning the first transistor TR₁ ;

(A-1) source/drain regions are constituted of the second region SC₂ and the third region SC₃, and

(A-2) a channel forming region CH₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃.

Concerning the second transistor TR₂ ;

(B-1) source/drain regions are constituted of the first region SC₁ and the fourth region SC₄, and

(B-2) a channel forming region CH₂ is constituted of a surface region of the third region SC₃ sandwiched by the first region SC₁ and the fourth region SC₄.

Further, concerning the junction-field-effect transistor TR₃ ;

(C-1) gate regions are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ is constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁, and

(C-3) source/drain regions are constituted of the second region SC₂ extending from both ends of the channel region CH₃ of the junction-field-effect transistor TR₃.

And, the gate region G is connected to a first memory-cell-selecting line, for example, a word line, the second region SC₂ is connected to a predetermined potential, the fourth region SC₄ is connected to a second memory-cell-selecting line, for example, a bit line, and the fifth region SC₅ is connected to a second predetermined potential.

The semiconductor memory cell of Example 6 shown in FIG. 38, more specifically, the third region SC₃ is formed in a well of the first conductivity type, for example, n-type, formed in a semiconductor substrate.

The junction-field-effect transistor TR₃ is formed by (1) optimizing the distance between the facing gate regions of the junction-field-effect transistor TR₃, that is, the thickness of the channel region CH₃, and (2) optimizing impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃. Further, when a region SC₇ containing a high concentration of an impurity having the first conductivity type is preferably formed under the first region SC₁, a potential or an electric charge stored in the channel forming region CH₁ of the first transistor TR₁ can be increased.

A semiconductor memory cell shown in FIG. 39 (see FIG. 10 for its principle) is a variant of the semiconductor memory cell shown in FIG. 38, and it has a so-called SOI structure in which it is formed on an insulator composed, e.g., of SiO₂. In addition, a semiconductor memory cell shown in FIG. 40 (see FIG. 10 for its principle) is a semiconductor memory cell having a so-called TFT structure, which is obtained by depositing, e.g., a polysilicon layer or an amorphous silicon layer on an insulator (insulating layer) formed on a supporting substrate and then forming the semiconductor memory cell on the polysilicon layer or the amorphous silicon layer.

In the semiconductor memory cell of Example 6, as FIG. 13 shows its principle and as FIGS. 41, 42 and 43 show schematic partial cross-sectional views, the fifth region SC₅ may be connected to the first region SC₁, in place of being connected to the second predetermined potential, a junction portion of the third region SC₃ and the fourth region SC₄ forms a diode D, and one source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D. The method explained in Example 2 can be employed for the above connections.

Otherwise, as FIG. 21 shows a principle and FIGS. 44, 45 and 46 show schematic partial cross-sectional views, the semiconductor memory cell may be a semiconductor memory cell in which it have a sixth conductive region SC₆ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃. A diode D is formed of the sixth region SC₆ and the third region SC₃, and the third region SC₃ corresponding to (or functioning as) the other source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D. Preferably, a silicide, a metal or a metal compound is used to constitute the sixth region SC₆, and the junction between the sixth region SC₆ and third region SC₃ is formed as a junction in which a larger number of carriers mainly constitute a forward current like a Schottky junction. Further, as FIG. 24 shows a principle and as FIGS. 47, 48 and 49 show schematic partial cross-sectional views, the fifth region SC₅ may be connected to the first region SC₁, in pace of being connected to the second predetermined potential.

In the semiconductor memory cell shown in FIGS. 41, 44 or 47, the third region SC₃ is formed in a well of the first conductivity type, for example, n-type, formed in a semiconductor substrate. Each semiconductor memory cell shown in FIGS. 42, 45 or 48 has a SOI structure, and each semiconductor memory cell shown in FIGS. 43, 46 or 49 has a TFT structure.

Example 7

Example 7 is directed to the semiconductor memory cell according to the second and ninth aspects of the present invention. The principle of the semiconductor memory cell of Example 7 is the same as that of the semiconductor memory cell in Example 5 of which the principle is shown in FIG. 29A, while the constitution of the regions thereof differs from that of the semiconductor memory cell of Example 5 as shown in the schematic partial cross-sectional view of FIG. 50. However, the semiconductor memory cell of Example 7 is the same in that it is constituted of a first transistor TR₁, a second transistor TR₂ and a third transistor TR₄ which are merged to one transistor.

The semiconductor memory cell of Example 7 comprises a first transistor TR₁ of a first conductivity type (for example, n-type) for read-out, a second transistor TR₂ of a second conductivity type (for example, p-type) for write-in, a junction-field-effect transistor TR₃ of a first conductivity type (for example, n-type) for current control, and a third transistor TR₄ of a second conductivity type (for example, p-type) for write-in. And the semiconductor memory cell has;

(a) a third semi-conductive region SC₃ having a first conductivity type, for example, n-type,

(b) a fourth semi-conductive region SC₄ having a second conductivity type, for example, p⁺ -type, or a fourth conductive region SC₄ formed of a silicide, a metal or a metal compound, which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃,

(c) a first semi-conductive region SC₁ formed in a surface region of the third region SC₃ and spaced from the fourth region SC₄, said first region SC₁ having the second conductivity type, for example, p⁺ -type,

(d) a second semi-conductive region SC₂ formed in a surface region of the first region SC₁, said second region SC₂ having the first conductivity type, for example, n⁺ -type,

(e) a fifth semi-conductive region SC₅ having the second conductivity type, for example, p⁺ -type, or a fifth conductive region SC₅ formed of a silicide, a metal or a metal compound, which is formed in a surface region of the second region SC₂ and forms a rectifier junction together with the second region SC₂, and

(f) a gate region G shared by the first transistor TR₁, the second transistor TR₂ and the third transistor TR₄ and formed on a barrier layer so as to bridge the first region SC₁ and the fourth region SC₄, so as to bridge the second region SC₂ and the third region SC₃ and so as to bridge the third region SC₃ and the fifth region SC₅.

Concerning the first transistor TR₁ ;

(A-1) source/drain regions are constituted of the second region SC₂ and a surface region of the third region SC₃ which surface region is sandwiched by the first region SC₁ and the fourth region SC₄, and

(A-2) a channel forming region CH₁ is constituted of a surface region of the first region SC₁ sandwiched by the second region SC₂ and the third region SC₃.

Concerning the second transistor TR₂ ;

(B-1) source/drain regions are constituted of the first region SC₁ and the fourth region SC₄, and

(B-2) a channel forming region CH₂ is constituted of a surface region of the third region SC₃ which surface region corresponds to (or functions as) one source/drain region of the first transistor TR₁ and is sandwiched by the first region SC₁ and the fourth region SC₄.

Further, concerning the junction-field-effect transistor TR₃ ;

(C-1) gate regions are constituted of the fifth region SC₅ and a portion of the first region SC₁ facing the fifth region SC₅,

(C-2) a channel region CH₃ is constituted of part of the second region SC₂ sandwiched by the fifth region SC₅ and said portion of the first region SC₁,

(C-3) one source/drain region is constituted of the second region SC₂ which extends from one end of the channel region CH₃ of the junction-field-effect transistor TR₃ and corresponds to (or functions as) one source/drain region of the first transistor TR₁, and

(C-4) the other source/drain region is constituted of the second region SC₂ extending from the other end of the channel region CH₃ of the junction-field-effect transistor TR₃.

Concerning the third transistor TR₄ ;

(D-1) one source/drain region is constituted of the surface region of the first region SC₁ corresponding to (or functioning as) the channel forming region CH₁ of the first transistor TR₁,

(D-2) the other source/drain region is constituted of the fifth region SC₅, and

(D-3) a channel forming region CH₄ is constituted of the second region SC₂ corresponding to (or functioning as) one source/drain region of the first transistor TR₁.

And, the gate region G is connected to a first memory-cell-selecting line, for example, a word line, the second region SC₂ is connected to a predetermined potential, and the fourth region SC₄ is connected to a second memory-cell-selecting line, for example, a bit line. Further, a junction portion of the third region SC₃ and the fourth region SC₄ forms a diode D, and one source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D.

The semiconductor memory cell of Example 7 shown in FIG. 50, more specifically, the third region SC₃ is formed in a well of the first conductivity type, for example, n-type, formed in a semiconductor substrate.

The junction-field-effect transistor TR₃ is formed by (1) optimizing the distance between the facing gate regions of the junction-field-effect transistor TR₃, that is, the thickness of the channel region CH₃, and (2) optimizing impurity concentrations of the facing gate regions and the channel region CH₃ of the junction-field-effect transistor TR₃. Further, when a region SC₇ containing a high concentration of an impurity having the first conductivity type is preferably formed under the first region SC₁, a potential or an electric charge stored in the channel forming region CH₁ of the first transistor TR₁ can be increased.

Semiconductor memory cells shown in FIGS. 51 and 52 (see FIG. 29A for their principles) are variants of the semiconductor memory cell shown in FIG. 50, and have an SOI structure and a TFT structure, respectively.

Semiconductor memory cells shown in FIGS. 53, 54 and 55 (see FIG. 29B for their principle) are variants of the semiconductor memory cells shown in FIGS. 50, 51 and 52, respectively. Each semiconductor memory cell has a sixth conductive region SC₆ which is formed in a surface region of the third region SC₃ and forms a rectifier junction together with the third region SC₃. A diode is formed of the sixth region SC₆ and the third region SC₃, and third region SC₃ corresponding to (or functioning as) the other source/drain region of the first transistor TR₁ is connected to the second memory-cell-selecting line through the diode D. Preferably, a silicide, a metal or a metal compound is used to constitute the sixth region SC₆, and the junction between the sixth region SC₆ and third region SC₃ is formed as a junction in which a larger number of carriers mainly constitute a forward current like a Schottky junction.

The semiconductor memory cells explained in Examples 6 and 7 can be produced substantially in the same manner as in Example 3 except that the procedures for forming each region differ, and detailed explanations of their production are therefore omitted.

The operation of the semiconductor memory cells of Examples 1 to 7 will be explained below. It should be noted that the principles of operation of the semiconductor memory cells of Examples 1 to 7 are substantially same.

In write-in operation, potentials at portions of the semiconductor memory cell are set as shown in the following Table 1.

Table 1

First memory-cell-selecting line: V_(W)

Second memory-cell-selecting line

when writing "0": V₀

when writing "1": V₁

In read-out operation, potentials at portions of the semiconductor memory cell are set as shown in the following Table 2. Further, in read-out operation, a potential of the information read-out line or the second memory-cell-selecting line to which the third region SC₃ is connected is set as shown in the following Table 2. The predetermined potential including 0 Volt is applied to the second region SC₂.

Table 2

First memory-cell-selecting line: V_(R)

Information read-out line or second memory-cell-selecting line: V₂

A threshold voltage of the first transistor TR₁ seen from the gate region is given as shown in the following Table 3. Further, the relationship among potentials in the first transistor TR₁ is set as shown in Table 3. A potential of the channel forming region CH₁ of the first transistor TR₁ when information "0" is read out is different from that when information "1" is read out. As a result, the threshold voltage of the first transistor TR₁ seen from the gate region changes, depending upon whether the stored information is "0" or "1". However, unlike a conventional DRAM, the semiconductor memory cell of the present invention does not require a capacitor with a large capacitance required by a conventional DRAM. When the ratio of an on-state current to an off-state current of the junction-field-effect transistor TR₃ is large, information can be read out without any error even if

    |V.sub.R |≧|V.sub.TH.sbsb.--.sub.11 |.

Table 3

When "0" is read out: V_(TH).sbsb.--₁₀

When "1" is read out: V_(TH).sbsb.--₁₁

    |V.sub.TH.sbsb.--.sub.11 |>|V.sub.R |>|V.sub.TH.sbsb.--.sub.10 |

[Operation to write information]

In operation to write "0" by setting the potential of the second memory-cell-selecting line at V₀ or write "1" by setting the potential of the second memory-cell-selecting line at V₁, the potential of the first memory-cell-selecting line is set at V_(W) (<0). As a result, the potential of the gate region G₂ of the second transistor TR₂ is set at V_(W) (<0) as well, and the second transistor TR₂ is brought into an on-state. Therefore, the potential of the channel forming region CH₁ of the first transistor TR₁ is V₀ when information "0" is written in, or V₁ when information "1" is written in.

After the information has been written in, potentials of portions in the first transistor TR₁ and the second transistor TR₂ should be set at such values that these transistors do not conduct. For this purpose, typically, the potential of the first memory-cell-selecting line is set at 0 Volt and the potential of the second memory-cell-selecting line is set at V₁.

In operation to write information, the potential of the gate region G₁ of the first transistor TR₁ is also set at V_(W) (<0). As a result, the first transistor TR₁ is in an off-state. In this state, the potential of the channel forming region CH₁ of the first transistor TR₁ is V₀ when information "0" is written in, or V₁ when information "1" is written in. In spite of the fact that this state changes with the lapse of time due to leakage currents, this state is none the less maintained within an allowable range till operation to read out the information is carried out. Examples of the leakage currents are a current flowing between the channel forming region CH₁ of the first transistor TR₁ and, for example, a semiconductor substrate, or an off-state current of the second transistor TR₂. It should be noted that so-called refresh operation is carried out before the potential of the channel forming region CH₁ of the first transistor TR₁ changes with the lapse of time to cause an error in operation to read out the information.

[Operation to read out information]

In operation to read out the information "0" or "1", the potential of the first memory-cell-selecting line is set at V_(R) (>0) . Therefore, the potential of the gate region G₂ of the second transistor TR₂ is also set at V_(R) (>0) . As a result, the second transistor TR₂ is brought into an off-state.

The potential of the gate region G₁ of the first transistor TR₁ is set at V_(R) (>0) as well. The threshold voltage of the first transistor TR₁ seen from the gate region is V_(TH).sbsb.--₁₀ or V_(TH).sbsb.--₁₁ for stored information of "0" or "1" respectively. The threshold voltage of the first transistor TR₁ depends upon the state of the potential of the channel forming region CH₁. The relationship among the potentials and the threshold voltages is as follows.

    |V.sub.TH.sbsb.--.sub.11 |>|V.sub.R |>|V.sub.TH.sbsb.--.sub.10 |

Therefore, when the stored information is "0", the first transistor TR₁ is brought into an on-state. When the stored information is "1", on the other hand, the first transistor TR₁ is brought into an off-state. However, when the ratio of an on-state current to an off-state current of the junction-field-effect transistor TR₃ is large, the information can be read out without any error even if |V_(R) |≧|V_(TH).sbsb.--₁₁ |.

Further, the first transistor TR₁ is controlled by the junction-field-effect transistor TR₃ on the basis of the bias conditions of the gate regions of the junction-field-effect transistor TR₃ which are constituted of the first region SC₁ and the fifth region SC₅ (or fourth region SC₄). That is, when the stored information is "0", the junction-field-effect transistor TR₃ is brought into an on-state. When the stored information is "1", on the other hand, the junction-field-effect transistor TR₃ is brought into an off-state.

In the above manner, the first transistor TR₁ can be brought into an on-state or an off-state with a high degree of reliability depending upon the stored information. Since the third region SC₃ is connected to the information read-out line or the second memory-cell-selecting line, a current flows or does not flow depending upon whether the stored information is "0" or "1". As a result, the stored information can be read out by the first transistor TR₁.

The operating states of the first transistor TR₁, the second transistor TR₂ and the junction-field-effect transistor TR₃ described above are summarized in Table 4. It should be noted that the values of potentials shown in Table 4 are no more than typical values, which can be any values as long as the conditions described above are satisfied.

                  TABLE 4                                                          ______________________________________                                         unit: volt                                                                     ______________________________________                                                        Write-in of  Write-in of                                        Write-in operation                                                                            "0"          "1"                                                ______________________________________                                         Potential of first memory-                                                                    V.sub.W  -3.0    V.sub.W                                                                               -3.0                                    cell-selecting line                                                            Potential of second memory-                                                                   V.sub.0  0       V.sub.1                                                                               -2.0                                    cell-selecting line                                                            Potential of gate region G                                                                    V.sub.W  -3.0    V.sub.W                                                                               -3.0                                    State of TR.sub.2                                                                             ON           ON                                                 Potential of channel forming                                                                  V.sub.0  0       V.sub.1                                                                               -2.0                                    region CH.sub.1                                                                State of TR.sub.1                                                                             OFF          OFF                                                State of TR.sub.3                                                                             ON           OFF                                                ______________________________________                                                        Read-out of  Read-out of                                        Read-out operation                                                                            "0"          "1"                                                ______________________________________                                         Potential of first memory-                                                                    V.sub.R  1.0     V.sub.R                                                                                 1.0                                   cell-selecting line                                                            Potential of gate region G                                                                    V.sub.R  1.0     V.sub.R                                                                                 1.0                                   State of TR.sub.2                                                                             OFF          OFF                                                Potential of channel forming                                                                  V.sub.0  0       V.sub.1                                                                               -2.0                                    region CH.sub.1                                                                Threshold voltage of TR.sub.1 seen                                                            V.sub.TH1.sbsb.-- .sub.0                                                                0.5     V.sub.TH1.sbsb.-- .sub.1                                                                1.1                                   from gate region                                                               State of TR.sub.1                                                                             ON           OFF                                                Potential of second memory-                                                                   1.0          1.0                                                cell-selecting line or                                                         information read-out line                                                      State of TR.sub.3                                                                             ON           OFF                                                ______________________________________                                    

The semiconductor memory cell of the present invention has been explained with reference to preferred embodiments hereinabove, while the present invention shall not be limited to those embodiments. The structures of the semiconductor memory cells, and voltages, potentials, etc., in the semiconductor memory cells explained as embodiments are examples, and may be changed as required. For example, in the semiconductor memory cells explained as embodiments, the first transistor TR₁ and the junction-field-effect transistor TR₃ may be p-type transistors, and the second transistor TR₂ and the third transistor TR₄ may be n-type transistors. The layout of elements in each transistor is an example, and may be changed as required. An impurity may be introduced into each region not only by an ion-implanting method but also by a diffusion method. Further, the present invention can be applied not only to a silicon semiconductor but also to a compound semiconductor, e.g., of a GaAs system. Moreover, the semiconductor memory cell of the present invention can be applied to a semiconductor memory cell having an MES FET structure.

For manufacturing the semiconductor memory cell of the present invention whose principle is shown in FIG. 1A, as one having the structure shown in FIG. 2, for example, an information read-out line can be provided so as to be laterally connected to the third region SC₃ positioned between the fourth region SC₄ and the fifth region SC₅. For manufacturing the semiconductor memory cell of the present invention whose principle is shown in FIG. 16A, as one having the structure shown in FIG. 17, for example, an information read-out line can be provided so as to be connected to the surface region of the third region SC₃ spaced from the fourth region SC₄ without providing the fifth region SC₅. For manufacturing the semiconductor memory cell of the present invention whose principle is shown in FIG. 16B, as one having the structure shown in FIG. 2, the fifth region SC₅ can connected to the second memory-cell-selecting line in place of connecting it to a second predetermined potential.

The method of forming a Schottky junction or the method of forming conductive regions in surface regions of various regions shall not be limited to those explained in Examples. When the second memory-cell-selecting line is formed, for example, titanium silicide or TiN is used to form a barrier layer or a glue layer, while such a barrier or glue layer is also formed on the surface of the third region SC₃, whereby the fifth conductive region SC₅ or the sixth conductive region SC₆ having a common region with the second memory-cell-selecting line (more specifically, with part of the barrier layer or the glue layer) can be formed in the surface of the third region SC₃. Similarly, a conductive region can be formed in the surface region of each region.

In the semiconductor memory cell of the present invention, the operation of the first transistor for read-out is defined by a potential or an electric charge (information) stored in the channel forming region of the first transistor for read-out. Information as a current of a transistor, which is read out within a refresh time, is in no case dependent upon the capacitance (e.g., a capacitance of the gate region+an added capacitance, etc.) even if it is additionally added. Therefore, the capacitance problem of a conventional semiconductor memory cell can be overcome, and even if an additional capacitor is added, a greatly large-capacitance capacitor like DRAM is no longer necessary. And, the maximum area of the semiconductor memory cell is equal to, or smaller, than the area of two transistors.

Furthermore, since the junction-field-effect transistor is provided and is turned on and off in information read-out operation, a large margin is left for a current which flows between the second region and the third region. As a result, the number of semiconductor memory cells to be connected to the bit line is scarcely limited, and the information holding time (retention time) of the semiconductor memory cell can be increased.

The process of each of the semiconductor memory cells according to the fifth to ninth aspects of the present invention is compatible with the MOS logic circuit formation process as shown in FIGS. 34 to 35 and FIGS. 36 to 37. Therefore, the area of one transistor is nearly sufficient for forming one semiconductor memory cell, and a DRAM function can be integrated into an MOS logic circuit with a slight increase in the number of steps. Further, SOI technology is not necessarily required, and one semiconductor memory cell can be formed nearly in the area of one transistor by a technology for forming a conventional semiconductor memory cell. 

What is claimed is:
 1. A semiconductor memory cell comprising a first transistor of a first conductivity type for read-out, a second transistor of a second conductivity type for write-in, and a junction-field-effect transistor of a first conductivity type for current control, wherein(A-1) one source/drain region of the first transistor is connected to a predetermined potential, (A-2) the other source/drain region of the first transistor has a common region with one source/drain region of the junction-field-effect transistor, (A-3) a gate region of the first transistor is connected to a first memory-cell-selecting line, (B-1) one source/drain region of the second transistor is connected to a second memory-cell-selecting line, (B-2) the other source/drain region of the second transistor has a common region with a channel forming region of the first transistor and with a first gate region of the junction-field-effect transistor, (B-3) a gate region of the second transistor is connected to the first memory-cell-selecting line, (C-1) a second gate region of the junction-field-effect transistor faces the first gate region thereof through a channel region thereof, the channel region thereof being an extended region of the other source/drain region of the first transistor, and (C-2) the other source/drain region of the junction-field-effect transistor is positioned in the extended region of the other source/drain region of the first transistor via the channel region.
 2. The semiconductor memory cell according to claim 1, wherein the second gate region of the junction-field-effect transistor is connected to a second predetermined potential, and the other source/drain region of the junction-field-effect transistor is connected to an information read-out line.
 3. The semiconductor memory cell according to claim 1, wherein the second gate region of the junction-field-effect transistor is connected to a second predetermined potential, and a junction portion of the other source/drain region of the junction-field-effect transistor and one source/drain region of the second transistor forms a diode.
 4. The semiconductor memory cell according to claim 1, wherein the semiconductor memory cell further comprises a diode, the second gate region of the junction-field-effect transistor is connected to a second predetermined potential, and the other source/drain region of the junction-field-effect transistor is connected to the second predetermined potential through the diode.
 5. The semiconductor memory cell according to claim 1, wherein the first gate region and the second gate region of the junction-field-effect transistor are connected to each other, and a junction portion of the other source/drain region of the junction-field-effect transistor and one source/drain region of the second transistor forms a diode.
 6. The semiconductor memory cell according to claim 1, wherein one source/drain region of the second transistor has a common region with the second gate region of the junction-field-effect transistor.
 7. The semiconductor memory cell according to claim 6, wherein the other source/drain region of the junction-field-effect transistor is connected to an information read-out line.
 8. The semiconductor memory cell according to claim 6, wherein a diode is formed in the other source/drain region of the junction-field-effect transistor, and one end of the diode is connected to the second memory-cell-selecting line.
 9. A semiconductor memory cell comprising a first transistor of a first conductivity type for read-out, a second transistor of a second conductivity type for write-in, a junction-field-effect transistor of a first conductivity type for current control, and a diode, wherein(A-1) one source/drain region of the first transistor has a common region with one source/drain region of the junction-field-effect transistor, (A-2) the other source/drain region of the first transistor is connected to a second memory-cell-selecting line through the diode, (A-3) a gate region of the first transistor is connected to a first memory-cell-selecting line, (B-1) one source/drain region of the second transistor is connected to the second memory-cell-selecting line, (B-2) the other source/drain region of the second transistor has a common region with a channel forming region of the first transistor and with a first gate region of the junction-field-effect transistor, (B-3) a gate region of the second transistor is connected to the first memory-cell-selecting line, (C-1) a second gate region of the junction-field-effect transistor faces the first gate region thereof through a channel region thereof, the channel region thereof being an extended region of one source/drain region of the first transistor, and (C-2) the other source/drain region of the junction-field-effect transistor is positioned in an extended region of the other source/drain region of the first transistor via the channel region, and is connected to a predetermined potential.
 10. The semiconductor memory cell according to claim 9, wherein the second gate region of the junction-field-effect transistor is connected to a second predetermined potential.
 11. The semiconductor memory cell according to claim 9, wherein the second gate region of the junction-field-effect transistor is connected to the first gate region thereof.
 12. The semiconductor memory cell according to claim 9, wherein the semiconductor memory cell further comprises a third transistor of a second conductivity type for write-in, and the second gate region of the junction-field-effect transistor is connected to the first gate region thereof through the third transistor. 